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PNP Silicon Transistor LRC L8550PLT1G General Purpose Component for Electronic Circuit Applications

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PNP Silicon Transistor LRC L8550PLT1G General Purpose Component for Electronic Circuit Applications

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 150nA

Pd - Power Dissipation : 300mW

Transition frequency(fT) : -

type : PNP

Number : 1 PNP

Current - Collector(Ic) : 800mA

Collector - Emitter Voltage VCEO : 25V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor PNP 25V 800mA 300mW Surface Mount SOT-23

Mfr. Part # : L8550PLT1G

Model Number : L8550PLT1G

Package : SOT-23

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Product Overview

General Purpose PNP Silicon Transistors designed for various applications. These transistors offer reliable performance with specific electrical and thermal characteristics suitable for electronic circuits.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Material: PNP Silicon
RoHS Compliance: Declared
Package Type: SOT-23
Certifications: AEC-Q101 Qualified and PPAP Capable (for S- Prefix series)

Technical Specifications

Characteristic	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	V CEO			-25	V
Collector-Base Voltage	V CBO			-40	V
Emitter-Base Voltage	V EBO			-5	V
Collector Current-Continuous	I C			-800	mAdc
DC Current Gain	H FE	100		600		I C =-100mA, VCE=-1V
Collector-Emitter Saturation Voltage	VCE(S)			-0.5	V	I C =-800mA, IB=-80mA
Collector-Emitter Breakdown Voltage	V (BR)CEO	-25			V	I C =-1.0mA
Emitter-Base Breakdown Voltage	V (BR)EBO	-5			V	I E = -100 A
Collector-Base Breakdown Voltage	V (BR)CBO	-40			V	I C= -100 A
Collector Cutoff Current	I CBO			-150	nA	VCB = -35 V
Emitter Cutoff Current	I EBO			-150	nA	VEB = -4V
Total Device Dissipation (FR-5 Board)	P D			225	mW	T A= 25 C
Derate above 25 C (FR-5 Board)				1.8	mW /C
Thermal Resistance, Junction to Ambient (FR-5 Board)	RJA			556	C/W
Total Device Dissipation (Alumina Substrate)	P D			300	mW	T A = 25 C
Derate above 25 C (Alumina Substrate)				2.4	mW /C
Thermal Resistance, Junction to Ambient (Alumina Substrate)	RJA			417	C/W
Junction and Storage Temperature	T J , T stg	-55		+150	C

1809291631_LRC-L8550PLT1G_C132811.pdf

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