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SOT23 packaged transistor LRC LMBT3904LT1G offering performance in amplification and switching circuits

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SOT23 packaged transistor LRC LMBT3904LT1G offering performance in amplification and switching circuits

Emitter-Base Voltage(Vebo) : 6V

Current - Collector Cutoff : 50nA

Pd - Power Dissipation : 300mW

Transition frequency(fT) : 300MHz

type : NPN

Current - Collector(Ic) : 200mA

Collector - Emitter Voltage VCEO : 40V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 300mW Surface Mount SOT-23

Mfr. Part # : LMBT3904LT1G

Model Number : LMBT3904LT1G

Package : SOT-23

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Product Overview

The LMBT3904LT1G is a general-purpose transistor from LESHAN RADIO COMPANY, LTD., designed for various electronic applications. It features a SOT-23 package and offers a range of electrical characteristics suitable for amplification and switching tasks.

Product Attributes

Brand: LESHAN RADIO COMPANY, LTD.
Package Type: SOT23
Lead Finish: PbFree (G-Suffix denotes Pb-Free)
Compliance: RoHS
Special Prefix: S- Prefix for Automotive and Other Applications (AEC-Q101 Qualified and PPAP Capable)

Technical Specifications

Characteristic	Symbol	Value	Unit	Notes
CollectorEmitter Voltage	V CEO	40	Vdc
CollectorBase Voltage	V CBO	60	Vdc
EmitterBase Voltage	V EBO	6.0	Vdc
Collector Current Continuous	I C	200	mAdc
Total Device Dissipation (FR5 Board)	PD	225	mW	TA = 25C, Derate above 25C 1.8 mW/C
Thermal Resistance, Junction to Ambient (FR5 Board)	RJA	556	C/W
Total Device Dissipation (Alumina Substrate)	PD	300	mW	TA= 25C, Derate above 25C 2.4 mW/C
Thermal Resistance, Junction to Ambient (Alumina Substrate)	RJA	417	C/W
Junction and Storage Temperature	TJ , Tstg	55 to +150	C
CollectorEmitter Breakdown Voltage	V (BR)CEO	40	Vdc	(I C = 1.0 mAdc)
CollectorBase Breakdown Voltage	V (BR)CBO	60	Vdc	(I C= 10 Adc)
EmitterBase Breakdown Voltage	V (BR)EBO	6.0	Vdc	(I E= 10 Adc)
Base Cutoff Current	I BL	50	nAdc	( V CE= 30 Vdc, V EB = 3.0 Vdc )
Collector Cutoff Current	I CEX	50	nAdc	( V CE = 30Vdc, V EB = 3.0Vdc )
DC Current Gain	hFE	40300		(I C =0.1 mAdc to 50mAdc, V CE =1.0 Vdc)
CollectorEmitter Saturation Voltage	VCE(sat)	0.20.3	Vdc	(I C = 10-50 mAdc, I B = 1.0-5.0 mAdc)
BaseEmitter Saturation Voltage	V BE(sat)	0.650.95	Vdc	(I C = 10-50 mAdc, I B = 1.0-5.0 mAdc)
CurrentGain Bandwidth Product	f T	300	MHz	(I C = 10mAdc, V CE= 20Vdc, f = 100MHz)
Output Capacitance	C obo	4.0	pF	(V CB = 5.0Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance	C ibo	8.0	pF	(VEB = 0.5Vdc, I C = 0, f = 1.0 MHz)
Input Impedance	h ie	1.010	k	(V CE = 10Vdc, I C= 1.0mAdc, f = 1.0 kHz)
Voltage Feedback Ratio	h re	0.58.0	X10 4	(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
SmallSignal Current Gain	h fe	100400		(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Output Admittance	h oe	1.040	mhos	(V CE = 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz)
Noise Figure	NF	5.0	dB	(V CE = 5.0 Vdc, I C = 100Adc, R S = 1.0 k , f = 1.0 kHz)
Delay Time	t d	35	ns	(V CC = 3.0 Vdc,V BE = 0.5Vdc, I C = 10 mAdc, I B1= 1.0mAdc)
Rise Time	t r	35	ns
Storage Time	t s	200	ns	(V CC = 3.0Vdc, I C = 10 mAdc,I B1= I B2 = 1.0 mAdc)
Fall Time	t f	50	ns
Device Marking		1AM
Shipping (LMBT3904LT1G)		3000/Tape & Reel
Shipping (LMBT3904LT3G)		10000/Tape & Reel

1809051326_LRC-LMBT3904LT1G_C49580.pdf

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