Home > Single Bipolar Transistors >

Durable NPN Silicon Transistor Slkor BC847BW Suitable for Multiple Electronic Circuit Applications

Product Categories

Single FETs, MOSFETs [3000]
Bridge Rectifiers [1296]
Single Bipolar Transistors [2284]
JFETs [73]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [550]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1371]
SCRs [158]
SCRs - Modules [48]
TRIACs [559]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

Durable NPN Silicon Transistor Slkor BC847BW Suitable for Multiple Electronic Circuit Applications

Emitter-Base Voltage(Vebo) : 6V

Current - Collector Cutoff : 15nA

DC Current Gain : 450@2mA,5V

Transition frequency(fT) : 100MHz

type : NPN

Vce Saturation(VCE(sat)) : 600mV

Pd - Power Dissipation : 200mW

Current - Collector(Ic) : 100mA

Collector - Emitter Voltage VCEO : 45V

Operating Temperature : -

Description : Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 200mW Surface Mount SOT-323

Mfr. Part # : BC847BW

Model Number : BC847BW

Package : SOT-323

Contact Now

Product Overview

The BC846W-BC850W series are NPN silicon epitaxial planar transistors designed for general purpose and switching applications. These transistors offer a range of voltage and current handling capabilities, making them suitable for various electronic circuits.

Product Attributes

Type: NPN Silicon Epitaxial Planar Transistor
Brand: slkormicro (implied by URL)

Technical Specifications

Parameter	Symbol	BC846W	BC847W	BC848W	BC849W	BC850W	Unit
Absolute Maximum Ratings (Ta = 25 ℃)
Collector Base Voltage	VCBO	80	50	30	30	50	V
Collector Emitter Voltage	VCEO	65	45	30	30	45	V
Emitter Base Voltage	VEBO	6	6	5	5	5	V
Collector Current	IC	100					mA
Peak Collector Current	ICM	200					mA
Total Power Dissipation	Ptot	200					mW
Junction Temperature	Tj	150					℃
Storage Temperature Range	Tstg	- 55 to + 150					℃
Characteristics (at Ta = 25 ℃)
DC Current Gain at VCE = 5 V, IC = 2 mA	hFE	110-220	200-450	420-800	-	-	-
	hFE	-	-	-	-	-	-
	hFE	-	-	-	-	-	-
Collector Base Voltage at IC = 10 µA	VCBO	80	50	30	30	50	V
Collector Emitter Voltage at IC = 10 mA	VCEO	65	45	30	30	45	V
Emitter Base Voltage at IE = 1 µA	VEBO	6	6	5	5	5	V
Collector Base Cutoff Current at VCB = 30 V	ICBO	- 15					nA
Emitter Base Cutoff Current at VEB = 5 V	IEBO	- 100					nA
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA	VCE(sat)	- 0.25					V
	IC = 100 mA, IB = 5 mA	VCE(sat)	- 0.6					V
Base Emitter Voltage at VCE = 5 V, IC = 2 mA	VBE	0.58					V
Base Emitter Voltage at VCE = 5 V, IC = 2 mA	VCE = 5 V, IC = 10 mA	VBE	0.7 - 0.77					V
Transition Frequency at VCE = 5 V, IC = 10 mA, f = 100 MHz	fT	100					MHz
Collector Output Capacitance at VCB = 10 V, IE = 0, f = 1 MHz	Cob	- 4.5					pF

Symbol	Min	Max
A	0.90	1.00
A1	0.010	0.100
B	1.20	1.40
bp	0.25	0.45
C	0.09	0.15
D	2.00	2.20
E	1.15	1.35
HE	2.15	2.55
Lp	0.25	0.46
θ	0º	6º

2210091830_Slkor-BC847BW_C5185928.pdf

Quality Durable NPN Silicon Transistor Slkor BC847BW Suitable for Multiple Electronic Circuit Applications for sale

Durable NPN Silicon Transistor Slkor BC847BW Suitable for Multiple Electronic Circuit Applications Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!