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Electronic Circuit PNP Transistor Slkor SS8550 Suitable for Amplification and Switching Applications

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Electronic Circuit PNP Transistor Slkor SS8550 Suitable for Amplification and Switching Applications

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

DC Current Gain : 400@100mA,1V

Transition frequency(fT) : 100MHz

Number : 1 PNP

Vce Saturation(VCE(sat)) : 500mV@800mA,80mA

type : PNP

Pd - Power Dissipation : 300mW

Current - Collector(Ic) : 1.5A

Collector - Emitter Voltage VCEO : 25V

Operating Temperature : -

Description : Bipolar (BJT) Transistor PNP 25V 1.5A 100MHz 300mW Surface Mount SOT-23

Mfr. Part # : SS8550

Model Number : SS8550

Package : SOT-23

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Product Overview

The SS8550 is a PNP transistor designed for general-purpose applications. It offers high collector current capabilities and serves as a complementary part to the SS8050. This transistor is suitable for various electronic circuits requiring amplification and switching functions.

Product Attributes

Brand: SLKORMicro (implied by website URL)
Type: PNP Transistor
Complementary to: SS8050

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
V_CBO	Collector-Base Voltage				-40	V
V_CEO	Collector-Emitter Voltage				-25	V
V_EBO	Emitter-Base Voltage				-5	V
I_C	Collector Current				-1.5	A
P_C	Collector Power Dissipation				300	mW
R_JA	Thermal Resistance From Junction To Ambient				417	/W
T_j	Junction Temperature				150
T_stg	Storage Temperature		-55		+150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
V_(BR)CBO	Collector-base breakdown voltage	I_C=-100A, I_E=0	-40			V
V_(BR)CEO	Collector-emitter breakdown voltage	I_C=-0.1mA, I_B=0	-25			V
V_(BR)EBO	Emitter-base breakdown voltage	I_E=-100A, I_C=0	-5			V
I_CBO	Collector cut-off current	V_CB=-40V, I_E=0			-100	nA
I_CEO	Collector cut-off current	V_CE=-20V, I_B=0			-100	nA
I_EBO	Emitter cut-off current	V_EB=-5V, I_C=0			-100	nA
h_FE(1)	DC current gain	V_CE=-1V, I_C=-100mA	120		400
h_FE(1)	DC current gain	V_CE=-1V, I_C=-800mA	40
V_CE(sat)	Collector-emitter saturation voltage	I_C=-800mA, I_B=-80mA			-0.5	V
V_BE(sat)	Base-emitter saturation voltage	I_C=-800mA, I_B=-80mA			-1.2	V
V_BE	Base-emitter voltage	V_CE=-1V, I_C=-10mA		-1		V
f_T	Transition frequency	V_CE=-10V,I_C=-50mA , f=30MHz		100		MHz
C_ob	Collector output capacitance	V_CB=-10V, I_E=0, f=1MHz			20	pF

Classification of hFE(1)

RANK	RANGE
L	120200
H	200350
J	300400

Package & Pinout

Package: SOT-23

Pinout:

BASE
EMITTER
COLLECTOR

1912111437_Slkor-SS8550_C444726.pdf

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