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Electronic circuit PNP transistor Slkor MMBT2907 designed for amplification and switching performance

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Electronic circuit PNP transistor Slkor MMBT2907 designed for amplification and switching performance

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 20nA

DC Current Gain : 100@150mA,10V

Transition frequency(fT) : 200MHz

Vce Saturation(VCE(sat)) : 400mV

type : PNP

Pd - Power Dissipation : 250mW

Current - Collector(Ic) : 600mA

Collector - Emitter Voltage VCEO : 40V

Operating Temperature : -

Description : Bipolar (BJT) Transistor PNP 40V 0.6A 200MHz 250mW Surface Mount SOT-23

Mfr. Part # : MMBT2907

Model Number : MMBT2907

Package : SOT-23

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Product Overview

The MMBT2907 is a PNP epitaxial planar transistor designed for general-purpose applications. It features complementary NPN type availability (MMBT2222). This transistor is suitable for various electronic circuits requiring amplification and switching functions.

Product Attributes

  • Brand: slkormicro (implied by URL)
  • Product Type: PNP Transistor
  • Complementary Type: MMBT2222 (NPN)
  • Package: SOT-23

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Ratings (Ta=25 unless otherwise noted)
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5 V
Collector Current - Continuous IC -600 mA
Total Device Dissipation PD 250 mW
Junction Temperature TJ 150
Storage Temperature Tstg -55 150
Electrical Characteristics (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=-10A,IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO* IC=-10mA,IB=0 -40 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V,IE=0 -20 nA
Base cut-off current IEBO VEB=-3V, IC =0 -10 nA
DC current gain hFE(1)* VCE=-10V,IC=-150mA 100 300
DC current gain hFE(2)* VCE=-10V,IC=-0.1mA 52
DC current gain hFE(3) VCE=-10V,IC=-500mA 32
Collector-emitter saturation voltage VCE(sat)* IC=-150mA,IB=-15mA -0.4 V
Collector-emitter saturation voltage VCE(sat)* IC=-500mA,IB=-50mA -0.67 V
Base-emitter saturation voltage VBE(sat)* IC=-150mA,IB=-15mA -1 V
Base-emitter saturation voltage VBE(sat)* IC=-500mA,IB=-50mA -1.2 V
Transition frequency fT VCE=-20V,IC=-50mA,f=100MHz 200 MHz
Delay time td 10 ns
Rise time tr VCE=-30V,IC=-150mA,IB1=-15mA 25 ns
Storage time tS 225 ns
Fall time tf VCE=-6V,IC=-150mA, IB1=- IB2=- 15mA 60 ns
Thermal Resistance Junction to Ambient RJA 500 /W
*Pulse test: tp300s, 0.02.
SOT-23 Package Outline Dimensions
Symbol Dimensions In Millimeters Dimensions In Inches
A 0.900 - 1.150 0.035 - 0.045
A1 0.000 - 0.100 0.000 - 0.004
A2 0.900 - 1.050 0.035 - 0.041
b 0.300 - 0.500 0.012 - 0.020
c 0.080 - 0.150 0.003 - 0.006
D 2.800 - 3.000 0.110 - 0.118
E 1.200 - 1.400 0.047 - 0.055
E1 2.250 - 2.550 0.089 - 0.100
e 1.800 - 2.000 0.071 - 0.079
e1 0.950 TYP 0.037 TYP
L 0.300 - 0.500 0.012 - 0.020
L1 0.550 REF 0.022 REF
0 - 8 0 - 8
Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR

2005211106_Slkor-MMBT2907_C556170.pdf


Quality Electronic circuit PNP transistor Slkor MMBT2907 designed for amplification and switching performance for sale

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