Home > Single Bipolar Transistors >

High gain PNP transistor Slkor S9015 designed for in amplification and switching electronic circuits

Product Categories

Bipolar Transistor Arrays [120]
Bridge Rectifiers [1296]
JFETs [73]
Single Bipolar Transistors [2284]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [536]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1334]
SCRs [158]
SCRs - Modules [48]
TRIACs [535]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]
Single FETs, MOSFETs [3000]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

High gain PNP transistor Slkor S9015 designed for in amplification and switching electronic circuits

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

DC Current Gain : 200@1mA,5V

Transition frequency(fT) : 150MHz

Vce Saturation(VCE(sat)) : 300mV

type : PNP

Pd - Power Dissipation : 200mW

Current - Collector(Ic) : 100mA

Collector - Emitter Voltage VCEO : 45V

Operating Temperature : -

Description : Bipolar (BJT) Transistor PNP 45V 0.1A 150MHz 200mW Surface Mount SOT-23

Mfr. Part # : S9015

Model Number : S9015

Package : SOT-23

Contact Now

Product Overview

The S9015 is a PNP transistor designed for general-purpose applications. It is complementary to the S9014 and offers a DC current gain (hFE) ranging from 200 to 1000. This transistor is suitable for use in common emitter configurations and is characterized by its collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).

Product Attributes

Brand: slkormicro
Type: PNP Transistor

Technical Specifications

Electrical Characteristics

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC= -100A, IE=0			-50	V
Collector-emitter breakdown voltage	V(BR)CEO	IC = -0.1mA, IB=0			-45	V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100A, IC=0			-5	V
Collector cut-off current	ICBO	VCB=-50 V, IE=0			-0.1	A
Emitter cut-off current	IEBO	VEB= -5V, IC=0			-0.1	A
DC current gain	hFE	VCE=-5V, IC= -1mA	200		1000
Collector-emitter saturation voltage	VCE(sat)	IC=-100mA, IB= -10mA		-0.3		V
Base-emitter saturation voltage	VBE(sat)	IC=-100mA, IB=-10mA		-1		V
Transition frequency	fT	VCE=-5V, IC= -10mA, f=30MHz	150			MHz

Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-Base Voltage	VCBO	-50	V
Collector-Emitter Voltage	VCEO	-45	V
Emitter-Base Voltage	VEBO	-5	V
Collector Current	IC	-100	mA
Collector Power Dissipation	PC	200	mW
Thermal Resistance From Junction To Ambient	RJA	625	/W
Junction Temperature	Tj	150
Storage Temperature	Tstg	-55+150

Package Dimensions (SOT-23)

Symbol	Dimensions In Millimeters	Dimensions In Inches
A	0.900 - 1.150	0.035 - 0.045
A1	0.000 - 0.100	0.000 - 0.004
A2	0.900 - 1.050	0.035 - 0.041
b	0.300 - 0.500	0.012 - 0.020
c	0.080 - 0.150	0.003 - 0.006
D	2.800 - 3.000	0.110 - 0.118
E	1.200 - 1.400	0.047 - 0.055
E1	2.250 - 2.550	0.089 - 0.100
e	1.800 - 2.000	0.071 - 0.079
e1	0.300 - 0.500	0.012 - 0.020
L	0.550 REF	0.022 REF
L1	0.950 TYP	0.037 TYP
	0 - 8	0 - 8

Pinout

1. BASE
2. EMITTER
3. COLLECTOR

2005211106_Slkor-S9015_C556175.pdf

Quality High gain PNP transistor Slkor S9015 designed for in amplification and switching electronic circuits for sale

High gain PNP transistor Slkor S9015 designed for in amplification and switching electronic circuits Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!