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12V transistor DIODES ZXTN25012EFLTA offering high peak current and performance in switching circuits

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12V transistor DIODES ZXTN25012EFLTA offering high peak current and performance in switching circuits

Emitter-Base Voltage(Vebo) : 7V

Current - Collector Cutoff : 50nA

Pd - Power Dissipation : 350mW

Transition frequency(fT) : 260MHz

type : NPN

Current - Collector(Ic) : 2A

Collector - Emitter Voltage VCEO : 12V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor NPN 12V 2A 350mW Surface Mount SOT-23

Mfr. Part # : ZXTN25012EFLTA

Model Number : ZXTN25012EFLTA

Package : SOT-23

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Product Overview

The ZXTN25012EFL is a 12V, SOT23, NPN low power transistor designed with advanced process capability for high current gain hold-up. This makes it ideal for applications requiring high pulse currents. Key features include high peak current, low saturation voltage, and a 6V reverse blocking voltage. It is suitable for MOSFET and IGBT gate driving, DC-DC conversion, LED driving, and interfacing between low voltage ICs and loads.

Product Attributes

Brand: Zetex
Package Type: SOT23
Certifications: ISO 9001, TS16949, RoHS compliant

Technical Specifications

Parameter	Symbol	Min.	Typ.	Max.	Unit	Conditions
Collector-base breakdown voltage	BVCBO	20		40	V	IC = 100 A
Collector-emitter breakdown voltage	BVCEO	12		17	V	IC = 10mA (*)
Emitter-base breakdown voltage	BVEBO	7		8.3	V	IE = 100 A
Emitter-collector breakdown voltage (reverse blocking)	BVECX	6		8	V	IE = 100 A, RBC 1k or 0.25v > VBC > -0.25V
Emitter-collector breakdown voltage (base open)	BVECO	4.5		5.5	V	IE = 100 A
Collector cut-off current	ICBO		<1	50	nA	VCB = 16V
Collector cut-off current	ICBO		20		A	VCB = 16V, Tamb= 100C
Emitter-base cut-off current	IEBO		<1	50	nA	VEB = 5.6V
Collector-emitter saturation voltage	VCE(sat)	50		65	mV	IC = 1A, IB = 100mA(*)
Collector-emitter saturation voltage	VCE(sat)	70		85	mV	IC = 1A, IB = 10mA(*)
Collector-emitter saturation voltage	VCE(sat)	105		130	mV	IC = 2A, IB = 40mA(*)
Collector-emitter saturation voltage	VCE(sat)	235		300	mV	IC = 5A, IB = 100mA(*)
Base-emitter saturation voltage	VBE(sat)	830		950	mV	IC = 2A, IB = 40mA(*)
Base-emitter turn-on voltage	VBE(on)	745		850	mV	IC = 2A, VCE = 2V(*)
Static forward current transfer ratio	hFE	500		800		IC = 10mA, VCE = 2V(*)
Static forward current transfer ratio	hFE		500	700		IC = 1A, VCE = 2V(*)
Static forward current transfer ratio	hFE	370		575		IC = 2A, VCE = 2V(*)
Static forward current transfer ratio	hFE	210		335		IC = 5A, VCE = 2V(*)
Static forward current transfer ratio	hFE	30		55		IC = 15A, VCE = 2V(*)
Transition frequency	fT	260			MHz	IC = 50mA, VCE = 10V f = 100MHz
Output capacitance	Cobo		25	35	pF	VCB = 10V, f = 1MHz(*)
Delay time	t(d)		71		ns	VCC = 10V IC = 1A, IB1 = IB2= 10mA
Rise time	t(r)		70		ns	VCC = 10V IC = 1A, IB1 = IB2= 10mA
Storage time	t(s)		233		ns	VCC = 10V IC = 1A, IB1 = IB2= 10mA
Fall time	t(f)		72		ns	VCC = 10V IC = 1A, IB1 = IB2= 10mA
Collector-base voltage	VCBO			20	V
Collector-emitter voltage	VCEO			12	V
Emitter-collector voltage	VECO			4.5	V
Emitter-base voltage	VEBO			7	V
Continuous collector current	IC			2	A	(a)
Base current	IB			500	mA
Peak pulse current	ICM			15	A
Power dissipation @ Tamb =25C	PD			350	mW	(a)
Linear derating factor			2.8		mW/C
Operating and storage temperature range	Tj, Tstg	-55		150	C
Junction to ambient thermal resistance	RJA		357		C/W	(a)

2410010131_DIODES-ZXTN25012EFLTA_C460289.pdf

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