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MMBT3906 PNP transistor epitaxial planar die construction designed for electronic device performance

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MMBT3906 PNP transistor epitaxial planar die construction designed for electronic device performance

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 200mW

Transition frequency(fT) : 300MHz

type : PNP

Current - Collector(Ic) : 200mA

Collector - Emitter Voltage VCEO : 40V

Operating Temperature : -55℃~+150℃@(Tj)

Description : Bipolar (BJT) Transistor PNP 40V 200mA 300MHz 200mW Surface Mount SOT-23

Mfr. Part # : MMBT3906

Model Number : MMBT3906

Package : SOT-23

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MMBT3906 PNP TRANSISTOR

The MMBT3906 is a PNP epitaxial planar die construction transistor, serving as the complementary type to the MMBT3904 NPN transistor. It is suitable for various electronic applications requiring PNP transistor functionality.

Product Attributes

Marking Type number: MMBT3906
Marking code: 2A

Technical Specifications

Symbol	Parameter	Test conditions	Min	Max	Unit
MAXIMUM RATINGS
VCBO	CollectorBase Voltage		-40		V
VCEO	CollectorEmitter Voltage		-40		V
VEBO	EmitterBase Voltage		-5		V
IC	Collector Current Continuous			-0.2	A
PC	Collector Dissipation	(Ta=25 unless otherwise noted)		0.2	W
RthJA	Thermal Resistance From Junction To Ambient			625	/W
TJ,Tstg	Operation Junction and Storage Temperature Range		-55~+150
ELECTRICAL CHARACTERISTICS
V(BR)CBO	Collector-base breakdown voltage	IC =-10uA, IE = 0	-40		V
V(BR)CEO	Collector-emitter breakdown voltage	IC =-1 mA, IB = 0	-40		V
V(BR)EBO	Emitter-base breakdown voltage	IE =-10uA, IC = 0	-5		V
ICBO	Collector cut-off current	VCB =-40V, IE = 0		-50	nA
ICEX	Collector cut-off current	VC =-30V, IE = 0		-100	nA
hFE1	DC current gain	VC =-20V, IC =-10mA		300
hFE2	DC current gain	VCE =-3V, IC =-10mA, IB1= 1mA		300
hFE3	DC current gain	VCE =-3V, IC =-10mA,IB1= 1mA		300
VCE(sat)	Collector-emitter saturation voltage	IC =-10mA, IB =-1mA		-0.3	V
VCE(sat)	Collector-emitter saturation voltage	IC =-50mA, IB =-5mA		-0.95	V
VBE(sat)	Base-emitter saturation voltage	IC =-10mA, IB =-1mA		-0.77	V
VBE(sat)	Base-emitter saturation voltage	IC =-50mA, IB =-5mA		-1.2	V
fT	Transition frequency	IC =-10mA, VCE =-20V, f=100MHz		300	MHz
td	Delay time	VCC =-3V, IC =-10mA, IB1= 1mA, IB2=- 100			ns
tr	Rise time	VCC =-3V, IC =-10mA, IB1= 1mA, IB2=- 100			ns
ts	Storage time	VCC =-3V, IC =-10mA, IB1= 1mA, IB2=- 100			ns
tf	Fall time	VCC =-3V, IC =-10mA, IB1= 1mA, IB2=- 100			ns
IEBO	Emitter cut-off current	VEB =-5V, IC = 0		-100	nA

2410010232_GOODWORK-MMBT3906_C909755.pdf

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