Home > Single Bipolar Transistors >

General purpose NPN transistor GOODWORK 2N3904 suitable for switching and amplification applications

Product Categories

Single FETs, MOSFETs [3000]
Bridge Rectifiers [1296]
Single Bipolar Transistors [2284]
JFETs [73]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [550]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1371]
SCRs [158]
SCRs - Modules [48]
TRIACs [559]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

General purpose NPN transistor GOODWORK 2N3904 suitable for switching and amplification applications

Current - Collector Cutoff : 100nA

Emitter-Base Voltage(Vebo) : 6V

Pd - Power Dissipation : 200mW

Transition frequency(fT) : 300MHz

type : NPN

Current - Collector(Ic) : 200mA

Collector - Emitter Voltage VCEO : 40V

Operating Temperature : -55℃~+150℃@(Tj)

Description : 200mW NPN 200mA 40V SOT-23 Single Bipolar Transistors RoHS

Mfr. Part # : 2N3904

Model Number : 2N3904

Package : SOT-23

Contact Now

Product Overview

The 2N3904 is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It offers complementary characteristics to the MMBT3906 and is suitable for various electronic circuits.

Product Attributes

Brand: DEMACHEL
Type: NPN Transistor
Marking Code: 1AM

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
CollectorBase Voltage	VCBO				60	V
CollectorEmitter Voltage	VCEO				40	V
EmitterBase Voltage	VEBO				6	V
Collector Current Continuous	IC				200	mA
Collector Power Dissipation	PC	(Ta=25)			200	mW
Thermal Resistance From Junction To Ambient	RthJA			625		/W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC = 10uA, IE = 0	60			V
Collector-emitter breakdown voltage	V(BR)CEO	IC = 1 mA, IB = 0	40			V
Emitter-base breakdown voltage	V(BR)EBO	IE = 10uA, IC = 0	6			V
Collector cut-off current	ICEX	VCB = 60V, IE = 0			100	nA
Collector cut-off current	ICBO	VCB = 5V, IE = 0			30	nA
Emitter cut-off current	IEBO	VEB = 5V, IC =0			35	nA
DC current gain	hFE1	VCE = 30V, VEB(off) =3V		100
DC current gain	hFE2	VCE = 1V, IC = 10mA		100	300
DC current gain	hFE3	VCE = 1V, IC = 100mA		30
Collector-emitter saturation voltage	VCE(sat)	IC = 50mA, IB = 5mA		0.3		V
Collector-emitter saturation voltage	VCE(sat)	VCC = 3V, IC = 10mA		0.2	0.4	V
Base-emitter saturation voltage	VBE(sat)	IC = 50mA, IB = 5mA		0.95		V
Transition frequency	fT	VCE = 20V, IC = 10mA, f=100MHz		300		MHZ
Transition frequency	fT	VCE = 20V, IC = 10mA, f=100MHz		100		MHZ
Delay time	td	VCC = 3V, IC = 10mA, IB1=1mA, IB2=60mA			30	ns
Rise time	tr	VCC = 3V, IC = 10mA, IB1=1mA, IB2=60mA			35	ns
Storage time	ts	VCC = 3V, IC = 10mA, IB1=1mA, IB2=60mA			200	ns
Fall time	tf	VCC = 3V, IC = 10mA, IB1=1mA, IB2=60mA			50	ns
Capacitance	Cob	VCB = 10V, f=1MHz		1.0		1.2	pF
Capacitance	Cib	VBE = 0.5V, f=1MHz		10			pF

2508071805_GOODWORK-2N3904_C50176433.pdf

General purpose NPN transistor GOODWORK 2N3904 suitable for switching and amplification applications Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!