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Plastic Encapsulated Goodwork MJE172 Transistor Offering Low Current High Speed Switching Capability

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Plastic Encapsulated Goodwork MJE172 Transistor Offering Low Current High Speed Switching Capability

Emitter-Base Voltage(Vebo) : 7V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 12.5W

Transition frequency(fT) : 50MHz

type : PNP

Current - Collector(Ic) : 3A

Collector - Emitter Voltage VCEO : 80V

Operating Temperature : -55℃~+150℃@(Tj)

Description : Bipolar (BJT) Transistor PNP 80V 3A 50MHz 12.5W Through Hole TO-126

Mfr. Part # : MJE172

Model Number : MJE172

Package : TO-126

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Product Overview

The MJE172 is a PNP TO-126 plastic-encapsulated transistor designed for low power audio amplification and low current, high-speed switching applications. It features high current output up to -3A, low saturation voltage, and is a complement to the MJE182.

Product Attributes

Brand: Not Specified
Origin: Not Specified
Material: Plastic-Encapsulate
Color: Not Specified
Certifications: Not Specified

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Base Breakdown Voltage	BVCBO	IC = -100A, IE = 0	-100			V
Collector-Emitter Breakdown Voltage	BVCEO	IC = -1mA, IB = 0	-80			V
Emitter-Base Breakdown Voltage	BVEBO	IE = -100A, IC = 0	-7			V
Collector Cut-off Current	ICBO	VCB =-100V, IB = 0			-0.1	A
Emitter Cut-off Current	IEBO	VEB = 7V, IC = 0			0.1	A
DC Current Gain	hFE	VCE=-1V, IC= -100mA	50		250
		VCE=-1V, IC= -500mA	30
		VCE=-1V, IC= -1.5A	12
Collector-Emitter Saturation Voltage	VCE(sat)	IC = -500mA, IB = -50mA			-0.3	V
		IC = -1.5A, IB = -150mA			-0.9
		IC = -3A, IB = -600mA			-1.7
Base-Emitter Saturation Voltage	VBE(sat)	IC = -1.5A, IB = -150mA			-1.5	V
Base-Emitter Saturation Voltage	VBE(sat)	IC = -3A, IB = -600mA			-2.0
Base-Emitter On Voltage	VBE(on)	VCE=-1V, IC= -500mA		-1.2		V
Transition Frequency	fT	VCE = -10V, IB = -100mA		50		MHz
Output Capacitance	Cob	VCB = -10V,IE = 0,f=1MHz			50	pF

2410121615_GOODWORK-MJE172_C22466879.pdf

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