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NPN transistor GOODWORK 2SC2383 offering stable amplification and switching performance for electronics

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NPN transistor GOODWORK 2SC2383 offering stable amplification and switching performance for electronics

Current - Collector Cutoff : 1uA

Emitter-Base Voltage(Vebo) : 6V

Pd - Power Dissipation : 500mW

Transition frequency(fT) : 100MHz

type : NPN

Current - Collector(Ic) : 1A

Collector - Emitter Voltage VCEO : 160V

Operating Temperature : -55℃~+150℃@(Tj)

Description : 500mW NPN 1A 160V SOT-89 Single Bipolar Transistors RoHS

Mfr. Part # : 2SC2383

Model Number : 2SC2383

Package : SOT-89

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Product Overview

The 2SC2383 is an NPN transistor featuring excellent hFE characteristics. It is designed for various electronic applications requiring reliable amplification and switching capabilities.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Absolute Maximum Ratings	VCBO	160	V	Collector Base Voltage
	VCEO	160	V	Collector Emitter Voltage
	VEBO	6	V	Emitter Base Voltage
	IC	1	A	Collector Current
	IB	0.5	A	Base Current
	Ptot	500	mW	Collector Power Dissipation
	Tj	150		Junction Temperature
Storage Temperature Range	Tstg	-55 to +150
Electrical Characteristics	hFE	100-320	-	at VCE = 5 V, IC = 200 mA (Current Gain Group)
	ICBO	1	A	at VCB = 150 V (Collector Base Cutoff Current)
	IEBO	1	A	at VEB = 6 V (Emitter Base Cutoff Current)
	V(BR)CEO	160	V	at IC = 10 mA (Collector Emitter Breakdown Voltage)
	VCE(sat)	1.5	V	at IC = 500 mA, IB = 50 mA (Collector Emitter Saturation Voltage)
	VBE(on)	0.45-0.75	V	at IC = 5 mA, VCE = 5 V (Base Emitter on Voltage)
	fT	100	MHz	at VCE = 5 V, IC = 200 mA (Transition Frequency)
Collector Output Capacitance	Cob	20	pF	at VCB = 10 V, f = 1 MHz

2504161540_GOODWORK-2SC2383_C47435902.pdf

Quality NPN transistor GOODWORK 2SC2383 offering stable amplification and switching performance for electronics for sale

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