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Ciss-Input Capacitance : 27pF@15V
Operating Temperature : -65℃~+200℃@(Tj)
Pd - Power Dissipation : 500mW
Drain Current (Idss) : 5mA@15V
FET Type : -
RDS(on) : 175Ω
Gate-Source Breakdown Voltage (Vgss) : 30V
Gate-Source Cutoff Voltage (VGS(off)) : 1V@1nA
Description : 500mW 5mA@15V 175Ω 30V SMD-3P JFETs RoHS
Mfr. Part # : MQ2N5116UB
Model Number : MQ2N5116UB
Package : SMD-3P
This low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile ceramic surface mount package and is RoHS compliant in commercial grade versions. Screening in reference to MIL-PRF-19500 is available.
| Part Number | VGS (V) | VDS (V) | IG (mA) | PD (W) @ TA = +25C | V(BR)GSS (V) | VGS(off) (V) Min | VGS(off) (V) Max | IDSS (mA) Min | IDSS (mA) Max | rds(on) () @ ID = -1.0 mA | Crss (pF) | Ciss (pF) | Td(on) (ns) Min | Td(on) (ns) Max | tr (ns) Min | tr (ns) Max | Td(off) (ns) Min | Td(off) (ns) Max |
| 2N5114UB | 30 | 30 | 50 | 0.500 | 30 | 1.0 | 5.0 | -30 | -90 | 75 | 7.0 | 25 | 6 | 25 | 10 | 35 | 6 | 20 |
| 2N5115UB | 30 | 30 | 50 | 0.500 | 30 | 3.0 | 6.0 | -15 | -60 | 100 | 7.0 | 25 | 10 | 25 | 20 | 35 | 8 | 20 |
| 2N5116UB | 30 | 30 | 50 | 0.500 | 30 | 5.0 | 10 | -5.0 | -25 | 175 | 7.0 | 27 | 25 | 25 | 35 | 35 | 20 | 20 |
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Surface Mount P Channel J FET MICROCHIP MQ2N5116UB Ceramic Package RoHS Compliant Military Equivalent Images |