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NPN resistor equipped transistor Nexperia PDTC123EU115 offering compact solution for electronic designs

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NPN resistor equipped transistor Nexperia PDTC123EU115 offering compact solution for electronic designs

Input Resistor : 2.2kΩ

Resistor Ratio : 1

Collector - Emitter Voltage VCEO : 50V

Description : 50V SOT-323-3 Single, Pre-Biased Bipolar Transistors RoHS

Mfr. Part # : PDTC123EU,115

Model Number : PDTC123EU,115

Package : SOT-323-3

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Nexperia PDTC123E Series NPN Resistor-Equipped Transistors

The Nexperia PDTC123E series NPN resistor-equipped transistors are designed for general purpose switching and amplification, as well as inverter and interface circuits, and circuit driver applications. These transistors feature built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick and place costs. Each device integrates two resistors (R1 = 2.2 k, R2 = 2.2 k) within a single package, offering a compact and efficient solution for various electronic designs.

Product Attributes

  • Brand: Nexperia (formerly NXP Semiconductors)
  • Product Type: NPN Resistor-Equipped Transistor
  • Resistor Values: R1 = 2.2 k, R2 = 2.2 k

Technical Specifications

Type Number Package Marking Code PNP Complement EIAJ VCEO (Max) IO (DC) (Max) R1 Bias Resistor (Typ.) R2 Bias Resistor (Typ.)
PDTC123EE SOT416 (SC-75) 5A PDTA123EE PHILIPS 50 V 100 mA 2.2 k 2.2 k
PDTC123EEF SOT490 (SC-89) 6A PDTA123EEF 50 V 100 mA 2.2 k 2.2 k
PDTC123EK SOT346 (SC-59) 48 PDTA123EK 50 V 100 mA 2.2 k 2.2 k
PDTC123EM SOT883 (SC-101) G1 PDTA123EM 50 V 100 mA 2.2 k 2.2 k
PDTC123ES SOT54 (TO-92 / SC-43) TC123E PDTA123ES 50 V 100 mA 2.2 k 2.2 k
PDTC123ET SOT23 *26(1) PDTA123ET 50 V 100 mA 2.2 k 2.2 k
PDTC123EU SOT323 (SC-70) *48(1) PDTA123EU 50 V 100 mA 2.2 k 2.2 k

Key Characteristics

Parameter Conditions Min. Typ. Max. Unit
ICBO (Collector-base cut-off current) VCB = 50 V; IE = 0 A - - 100 nA
ICEO (Collector-emitter cut-off current) VCE = 30 V; IB = 0 A - - 1 A
ICEO (Collector-emitter cut-off current) VCE = 30 V; IB = 0 A; Tj = 150 C - - 50 A
IEBO (Emitter-base cut-off current) VEB = 5 V; IC = 0 A - - 2 mA
hFE (DC current gain) VCE = 5 V; IC = 20 mA 30 - -
VCEsat (Collector-emitter saturation voltage) IC = 10 mA; IB = 0.5 mA - - 150 mV
Vi(off) (Input-off voltage) IC = 1 mA; VCE = 5 V - 1.2 0.5 V
Vi(on) (Input-on voltage) IC = 20 mA; VCE = 0.3 V 2 1.6 - V
R1 (Input resistor) 1.54 2.2 2.86 k
Resistor ratio (R2/R1) 0.8 1 1.2
Cc (Collector capacitance) VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 2.5 pF

Ordering Information

Type Number Package Name Description Version
PDTC123EE SOT416 Plastic surface mounted package; 3 leads
PDTC123EEF SOT490 Plastic surface mounted package; 3 leads
PDTC123EK SOT346 Plastic surface mounted package; 3 leads
PDTC123EM SOT883 Leadless ultra small package; 3 solder lands; body 1.0 0.6 0.5 mm
PDTC123ES SOT54 Plastic single-ended leaded (through hole) package; 3 leads
PDTC123ET SOT23 Plastic surface mounted package; 3 leads
PDTC123EU SOT323 Plastic surface mounted package; 3 leads

For additional information, please visit: www.nexperia.com. For sales office addresses, send an email to: salesaddresses@nexperia.com.

© Nexperia B.V. 2004. All rights reserved.


2410121943_Nexperia-PDTC123EU-115_C552176.pdf


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