Home > TRIACs >

Durable HXY MOSFET 2P4M optimized for in igniters residual current circuit breakers and hair devices

Product Categories

Bridge Rectifiers [1296]
Single Bipolar Transistors [2284]
JFETs [73]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [550]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1371]
SCRs [158]
SCRs - Modules [48]
TRIACs [559]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]
Single FETs, MOSFETs [3000]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

Durable HXY MOSFET 2P4M optimized for in igniters residual current circuit breakers and hair devices

Holding Current (Ih) : 3mA

Current - Gate Trigger(Igt) : 90uA

Voltage - On State(Vtm) : 1.6V

Current - On State(It(RMS)) : 2A

Peak off - state voltage(Vdrm) : 600V

Current - Surge(Itsm@f) : 20A@50Hz

Gate Trigger Voltage (Vgt) : 800mV

Description : 3mA 90uA 600V SOT-89 TRIACs RoHS

Mfr. Part # : 2P4M

Model Number : 2P4M

Package : SOT-89

Contact Now

Product Overview

The 2P4M 2A SCR series offers a high dv/dt rate and strong resistance to electromagnetic interference. They are specifically recommended for applications such as residual current circuit breakers, straight hair devices, and igniters.

Product Attributes

Brand: HUAXUANYANG ELECTRONICS CO.,LTD
Model: 2P4M
Origin: Shenzhen, China
Package Type: SOT-89
Certifications: None explicitly mentioned

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Storage junction temperature range	Tstg		-40		150	C
Operating junction temperature range	Tj				125	C
Repetitive peak off-state voltage	VDRM	(Tj=25C)			600	V
Repetitive peak reverse voltage	VRRM	(Tj=25C)			600	V
RMS on-state current	IT(RMS)				2	A
Non repetitive surge peak on-state current	ITSM	(full cycle, F=50Hz)			20	A
Gate trigger current	IGT	VD=12V, RL =100		0.8		mA
Gate trigger voltage	VGT	VD=12V, RL =100		1.6		V
Off-state voltage	VGD	VD=VDRM Tj=110C	0.2			V
Holding current	IH	IT=50mA			0.1	mA
Rate of rise of off-state voltage	dV/dt	VD=2/3VDRM Tj=110C RGK=1K	20			V/s
On-state voltage	VTM	ITM=2A			1.6	V
Off-state current	IDRM	VD=VDRM RGK=1k			-	mA
Reverse current	IRRM	VRRM RGK=1k			-	mA

2508201703_HXY-MOSFET-2P4M_C50313591.pdf

Quality Durable HXY MOSFET 2P4M optimized for in igniters residual current circuit breakers and hair devices for sale

Durable HXY MOSFET 2P4M optimized for in igniters residual current circuit breakers and hair devices Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!