Home > Single Diodes >

Schottky Barrier Rectifier JSCJ SBDF40100TCTB Low Forward Voltage Drop High Current Capability

Product Categories

Single FETs, MOSFETs [3000]
Bridge Rectifiers [1296]
Single Bipolar Transistors [2284]
JFETs [73]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [550]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1371]
SCRs [158]
SCRs - Modules [48]
TRIACs [559]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

Schottky Barrier Rectifier JSCJ SBDF40100TCTB Low Forward Voltage Drop High Current Capability

Reverse Leakage Current (Ir) : 30uA@100V

Voltage - DC Reverse (Vr) (Max) : 100V

Diode Configuration : 1 Pair Common Cathode

Voltage - Forward(Vf@If) : 670mV@20A

Current - Rectified : 30A

Description : 100V 1 Pair Common Cathode 670mV@20A 30A TO-220F Single Diodes RoHS

Mfr. Part # : SBDF40100TCTB

Model Number : SBDF40100TCTB

Package : TO-220F

Contact Now

Product Overview

The SBD40100TCTB and SBDF40100TCTB are Schottky Barrier Rectifiers designed for low power loss and high efficiency. They offer high current capability and a low forward voltage drop, making them suitable for various power applications. The devices feature a Guard Ring Die Construction for transient protection.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Marking: SBD(F)40100TCTB = Device code; Solid dot = Green molding compound device if none, the normal device; XXXX = Code
Material: Plastic-Encapsulate Diodes

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit	SBD40100TCTB	SBDF40100TCTB
Peak repetitive reverse voltage	VRRM				100	V	✔	✔
Working peak reverse voltage	VRWM				70	V	✔	✔
DC blocking voltage	VR				100	V	✔	✔
RMS reverse voltage	VR(RMS)				70	V	✔	✔
Average rectified output current	IO				30	A	✔	✔
Non-Repetitive peak forward surge current (8.3ms half sine wave)	IFSM				250	A	✔	✔
Thermal resistance from junction to ambient	RJA				62.5	/W	✔
Thermal resistance from junction to case	RJc	Tc=25			2.0	/W	✔
Junction temperature	Tj		-55		150		✔	✔
Storage temperature	Tstg		-55		150		✔	✔
Reverse voltage	V(BR)	IR=0.1mA	100			V	✔	✔
Reverse current	IR	VR=100V		0.50	1.0	uA	Tj=25	Tj=125
Reverse current	IR	VR=100V		0.53		uA	Tj=25	Tj=125
Forward voltage	VF	IF=10A		0.64	0.67	V	Tj=25	Tj=25
Forward voltage	VF	IF=10A		0.72		V	Tj=125	Tj=125
Forward voltage	VF	IF=20A		0.64	0.72	V	Tj=25	Tj=25
Forward voltage	VF	IF=20A		0.72		V	Tj=125	Tj=125
Forward voltage	VF(typ)	@Tj=125		0.64		V	IF=10A	IF=10A
Total Capacitance	CTOT	f = 1 MHz, Tj = 25C				pF	VR=0V	VR=0V
Total Capacitance	CTOT	f = 1 MHz, Tj = 25C				pF	VR=10V	VR=10V
Total Capacitance	CTOT	f = 1 MHz, Tj = 25C				pF	VR=20V	VR=20V

2410121810_JSCJ-SBDF40100TCTB_C2924088.pdf

Quality Schottky Barrier Rectifier JSCJ SBDF40100TCTB Low Forward Voltage Drop High Current Capability for sale

Schottky Barrier Rectifier JSCJ SBDF40100TCTB Low Forward Voltage Drop High Current Capability Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!