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SOT323 Package Plastic Encapsulated Schottky Diode JSCJ RB715F Low Forward Voltage Component

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SOT323 Package Plastic Encapsulated Schottky Diode JSCJ RB715F Low Forward Voltage Component

Reverse Leakage Current (Ir) : 1uA@10V

Non-Repetitive Peak Forward Surge Current : 200mA

Voltage - DC Reverse (Vr) (Max) : 40V

Voltage - Forward(Vf@If) : 370mV@1mA

Current - Rectified : 30mA

Description : Diode 40V 30mA Surface Mount SOT-323

Mfr. Part # : RB715F

Model Number : RB715F

Package : SOT-323

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Product Overview

The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD RB715F is a Schottky Barrier Diode in a SOT-323 plastic-encapsulated package. It features an extra-small power mold type, low forward voltage (VF), and high reliability, making it suitable for various electronic applications.

Product Attributes

Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Model: RB715F
Package Type: SOT-323
Material: Plastic-Encapsulated
Marking: 3D

Technical Specifications

Parameter	Symbol	Limit/Test Conditions	Unit
Maximum Ratings
Peak reverse voltage	VRM	40	V
DC reverse voltage	VR	40	V
Non-repetitive Peak Forward Surge Current@t=8.3ms	IFSM	200	mA
Average forward current	IO	30	mA
Power dissipation	PD	200	mW
Junction temperature	Tj	125
Storage temperature	Tstg	-55+~150
Electrical Characteristics
Reverse voltage leakage current	IR	VR=10V	1 A
Forward voltage	VF	IF=1mA	0.37 V
Capacitance between terminals	CT	VR=1V, f=1MHz	2.0 pF
Thermal Resistance
Junction to Ambient	RJA	500	/W

2410121242_JSCJ-RB715F_C77352.pdf

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