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Plastic Encapsulate Rectifier Diode JSCJ ES3B Suitable for High Surge Current Applications

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Plastic Encapsulate Rectifier Diode JSCJ ES3B Suitable for High Surge Current Applications

Non-Repetitive Peak Forward Surge Current : 100A

Reverse Leakage Current (Ir) : 10uA@100V

Reverse Recovery Time (trr) : 35ns

Operating Junction Temperature Range : -55℃~+150℃

Voltage - DC Reverse (Vr) (Max) : 100V

Voltage - Forward(Vf@If) : 950mV@3A

Current - Rectified : 3A

Description : 100A 35ns 100V 950mV@3A 3A SMCG Single Diodes RoHS

Mfr. Part # : ES3B

Model Number : ES3B

Package : SMCG

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Product Overview

The ES3A through ES3J series are SMCG plastic-encapsulate diodes designed for high surge current capability. They function as rectifiers and are suitable for various applications requiring efficient power handling.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Marking: Color band denotes cathode
Material: Plastic-Encapsulate

Technical Specifications

Item	Symbol	Unit	Test Conditions	ES3A	ES3B	ES3C	ES3D	ES3G	ES3H	ES3J
Maximum RMS Voltage	VRRM	V		50	100	150	200	400	500	600
Repetitive Peak Reverse Voltage		V RMS		35	70	105	140	280	350	420
Average Forward Current	IF(AV)	A	60Hz Half-sine wave Resistance load T=100	3.0	3.0	3.0	3.0	3.0	3.0	3.0
Surge(Non-repetitive)Forward Current	IFSM	A	60Hz Half-sine wave 1 cycleTa=25	50	100	150	200	400	500	600
Operation Junction and Storage Temperature Range	TJ,TSTG			-55 ~ +150	-55 ~ +150	-55 ~ +150	-55 ~ +150	-55 ~ +150	-55 ~ +150	-55 ~ +150
Maximum DC Blocking Voltage	V DC	V		50	100	150	200	400	500	600
Peak Forward Voltage	VF	V	IF=3.0A, T=25	1.25	1.25	1.25	1.25	1.25	1.25	1.25
Peak Reverse Current	IRRM1	A	VRM=VRRM, Ta =25	10	10	10	10	10	10	10
Peak Reverse Current	IRRM2	A	VRM=VRRM, Ta =100	500	500	500	500	500	500	500
Maximum reverse recovery time	trr	ns	IF=0.5A,IR=1.0A,Irr=0.25A	35	35	35	35	35	35	35
Typical junction capacitance	CJ	pF	Measured at 1MHz and applied reverse voltage of 4.0V D.C.	80	80	80	80	80	80	80

2410121810_JSCJ-ES3B_C5293696.pdf

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