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Plastic Encapsulated Rectifier Diode JSCJ SB3100 DO27 Package High Surge Current Capability

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Plastic Encapsulated Rectifier Diode JSCJ SB3100 DO27 Package High Surge Current Capability

Non-Repetitive Peak Forward Surge Current : 80A

Reverse Leakage Current (Ir) : 100uA@100V

Operating Junction Temperature Range : -55℃~+150℃

Voltage - DC Reverse (Vr) (Max) : 100V

Voltage - Forward(Vf@If) : 850mV@3A

Current - Rectified : 3A

Description : Diode 100V 3000mA Through Hole DO-27

Mfr. Part # : SB3100

Model Number : SB3100

Package : DO-27

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Product Overview

The SB3 Series Schottky Rectifier Diodes are plastic-encapsulated diodes designed for rectifier applications. They offer high surge current capability and are available in the DO-27 package. These diodes are suitable for various rectifier functions where efficient rectification and high surge handling are required.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD (JSCJ)
Product Line: SB3 Series
Package: DO-27 Plastic-Encapsulate
Marking: SB3XX (X: From 20 To 100)
Polarity: Color band denotes cathode
Packaging: Ammo Box Packaging Specifications For Axial Lead Rectifiers

Technical Specifications

Item	Symbol	Unit	Conditions	SB3 20	SB3 30	SB3 40	SB3 50	SB3 60	SB3 80	SB3 100
Repetitive Peak Reverse Voltage	VRRM	V		20	30	40	50	60	80	100
Average Forward Current	IF(AV)	A	60Hz Half-sine wave, Resistance load, TL(Fig.1)	3.0
Surge(Non-repetitive)Forward Current	IFSM	A	60Hz Half-sine wave , 1 cycle , Ta =25	80
Junction Temperature	TJ			-55~+125
Storage Temperature	TSTG			-55 ~ +150
Maximum RMS Voltage	VRMS	V		21	28	35	42	56	70
Maximum DC Blocking Voltage	VDC	V	VRM=VRRM	20	30	40	50	60	80	100
Maximum Peak Forward Voltage	VFM	V	IFM=3.0A	0.55	0.7	0.85
Maximum Peak Reverse Current	IRRM1	mA	Ta=25	0.1
Maximum Peak Reverse Current	IRRM2	mA	Ta=125	10
Typical Thermal Resistance (Junction to Ambient)	RJ-A	/W	Between junction and ambient	40
Typical Thermal Resistance (Junction to Lead)	RJ-L	/W	Between junction and lead	20
Typical Junction Capacitance	CJ	pF	Measured at 1MHz and applied reverse voltage of 4.0V D.C.	250

2410121917_JSCJ-SB3100_C5295466.pdf

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