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Low reverse current fast switching diode FUXINSEMI BAS516 designed for surface mount and automatic insertion

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Low reverse current fast switching diode FUXINSEMI BAS516 designed for surface mount and automatic insertion

Non-Repetitive Peak Forward Surge Current : 2A

Reverse Leakage Current (Ir) : 1uA@75V

Reverse Recovery Time (trr) : 4ns

Operating Junction Temperature Range : -

Diode Configuration : Independent

Voltage - DC Reverse (Vr) (Max) : 100V

Pd - Power Dissipation : 150mW

Voltage - Forward(Vf@If) : 1.25V@150mA

Current - Rectified : 250mA

Description : Diode Independent 100V 250mA Surface Mount SOD-523(SC-79)

Mfr. Part # : BAS516

Model Number : BAS516

Package : SOD-523(SC-79)

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Product Overview

The BAS516 is a fast switching diode designed for surface mount applications, ideally suited for automatic insertion. It features a small package, low reverse current, and fast switching speed, making it suitable for various electronic circuits requiring efficient signal processing.

Product Attributes

  • Brand: FUXIN SEMI
  • Package Type: SOD-523

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V
Peak Repetitive Reverse Voltage VRRM 75 V
Working Peak Reverse Voltage VRWM 75 V
RMS Reverse Voltage VR(RMS) 53 V
Average Rectified Output Current IO (Ta=25 unless otherwise noted) 250 mA
Power Dissipation PD (Ta=25 unless otherwise noted) 150 mW
Thermal Resistance Junction to Ambient RJA 833 /W
Junction Temperature Tj 150
Storage Temperature Tstg -55 +150
Reverse voltage breakdown V(BR) IR=100A 75 V
Reverse current IR VR=25V 30 nA
Reverse current IR VR=75V 1 A
Forward voltage VF IF=1mA 0.715 V
Forward voltage VF IF=10mA 0.855 V
Forward voltage VF IF=50mA 1 V
Forward voltage VF IF=150mA 1.25 V
Total capacitance Ctot VR=0V,f=1MHz 1 pF
Reverse recovery time trr IF= IR =10mA, Irr=0.1*IR,RL=100 4 ns
Non-repetitive Peak Forward Surge Current IFSM @t=8.3ms 2.0 A

Package Outline Dimensions (SOD-523)

Dimension Min (mm) Max (mm) Min (in) Max (in)
A 0.510 0.770 0.020 0.031
A1 0.500 0.700 0.020 0.028
b 0.250 0.350 0.010 0.014
c 0.080 0.150 0.003 0.006
D 0.750 0.850 0.030 0.033
E 1.100 1.300 0.043 0.051
E1 1.500 1.700 0.059 0.067
E2
L 0.010 0.070 0.001 0.003
REF 7 7 0.200 0.008

Suggested Pad Layout

(Diagram not available in text format)


2209201730_FUXINSEMI-BAS516_C5178954.pdf


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