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Compact integrated digital transistor onsemi NSVMUN5111DW1T3G suitable for automotive and industrial circuits

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Compact integrated digital transistor onsemi NSVMUN5111DW1T3G suitable for automotive and industrial circuits

Input Resistor : 10kΩ

Resistor Ratio : 1

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-363

Mfr. Part # : NSVMUN5111DW1T3G

Model Number : NSVMUN5111DW1T3G

Package : SOT-363

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Product Overview

This series of digital transistors integrates a single transistor with a monolithic bias network of two resistors (base resistor and base-emitter resistor) into a single device. This design eliminates the need for external bias resistors, simplifying circuit design, reducing board space, and lowering component count. These devices are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, with S and NSV prefixes available for automotive and other applications requiring unique site and control change requirements, AEC-Q101 Qualified and PPAP Capable.

Product Attributes

Brand: onsemi (Semiconductor Components Industries, LLC)
Certifications: AEC-Q101 Qualified, PPAP Capable (for S and NSV prefixes), RoHS Compliant, Pb-Free, Halogen Free/BFR Free

Technical Specifications

Device	Package	Collector-Base Voltage (VCBO)	Collector-Emitter Voltage (VCEO)	Collector Current (IC)	Input Forward Voltage (VIN(fwd))	Input Reverse Voltage (VIN(rev))	R1	R2
MUN5111DW1, NSBA114EDXV6, NSBA114EDP6	SOT-363, SOT-563, SOT-963	50 Vdc	50 Vdc	100 mAdc	40 Vdc	10 Vdc	10 k	10 k

Characteristic	Symbol	MUN5111DW1 (SOT-363) Max	MUN5111DW1 (SOT-363) Max	NSBA114EDXV6 (SOT-563) Max	NSBA114EDXV6 (SOT-563) Max	NSBA114EDP6 (SOT-963) Max	NSBA114EDP6 (SOT-963) Max	Unit
Total Device Dissipation (One Junction Heated, TA = 25C)	PD	187	256	357	500	231	339	mW
Thermal Resistance, Junction to Ambient (One Junction Heated)	RJA	670	490	350	250	540	464	C/W
Junction and Storage Temperature Range	TJ, Tstg	55 to +150						C

Characteristic	Symbol	Min	Typ	Max	Unit
Collector-Base Cutoff Current	ICBO			100	nAdc
Collector-Emitter Cutoff Current	ICEO			500	nAdc
Emitter-Base Cutoff Current	IEBO			0.5	mAdc
Collector-Base Breakdown Voltage	V(BR)CBO	50			Vdc
Collector-Emitter Breakdown Voltage	V(BR)CEO	50			Vdc
DC Current Gain	hFE	35	60
Collector-Emitter Saturation Voltage	VCE(sat)			0.25	Vdc
Input Voltage (off)	Vi(off)		1.2		Vdc
Input Voltage (on)	Vi(on)		2.2		Vdc
Output Voltage (on)	VOL			0.2	Vdc
Output Voltage (off)	VOH	4.9			Vdc
Input Resistor	R1	7.0	10	13	k
Resistor Ratio	R1/R2	0.8	1.0	1.2

2411271950_onsemi-NSVMUN5111DW1T3G_C463398.pdf

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