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Integrated monolithic bias resistor network digital transistor onsemi NSVMUN5132T1G for circuit layouts

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Integrated monolithic bias resistor network digital transistor onsemi NSVMUN5132T1G for circuit layouts

Output Voltage(VO(on)) : 200mV

Input Resistor : 4.7kΩ

Resistor Ratio : 1

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 202mW Surface Mount SC-70-3

Mfr. Part # : NSVMUN5132T1G

Model Number : NSVMUN5132T1G

Package : SC-70-3

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Product Overview

This series of digital transistors (BRT) integrates a single PNP transistor with a monolithic bias resistor network, consisting of a base resistor and a base-emitter resistor. Designed to replace discrete components, these devices simplify circuit design, reduce board space, and lower component count. They are suitable for applications requiring a single device and its external resistor bias network.

Product Attributes

Brand: onsemi
Certifications: AEC-Q101 Qualified and PPAP Capable (for S and NSV Prefix), RoHS Compliant, PbFree, Halogen Free/BFR Free
Material: Monolithic Bias Resistor Network

Technical Specifications

Device Part	Marking	Package	CollectorBase Voltage (VCBO)	CollectorEmitter Voltage (VCEO)	Collector Current (IC)	Input Forward Voltage (VIN(fwd))	Input Reverse Voltage (VIN(rev))	R1	R2
MUN2132T1G, NSVMUN2132T1G*	6J	SC59	50 Vdc	50 Vdc	100 mAdc	30 Vdc	10 Vdc	4.7 k	4.7 k
MMUN2132LT1G, NSVMMUN2132LT1G*	A6J	SOT23	50 Vdc	50 Vdc	100 mAdc	30 Vdc	10 Vdc	4.7 k	4.7 k
MUN5132T1G, NSVMUN5132T1G*	6J	SC70/SOT323	50 Vdc	50 Vdc	100 mAdc	30 Vdc	10 Vdc	4.7 k	4.7 k
DTA143EET1G	43	SC75	50 Vdc	50 Vdc	100 mAdc	30 Vdc	10 Vdc	4.7 k	4.7 k
DTA143EM3T5G, NSVDTA143EM3T5G*	6J	SOT723	50 Vdc	50 Vdc	100 mAdc	30 Vdc	10 Vdc	4.7 k	4.7 k
NSBA143EF3T5G	A (90)*	SOT1123	50 Vdc	50 Vdc	100 mAdc	30 Vdc	10 Vdc	4.7 k	4.7 k

2410010231_onsemi-NSVMUN5132T1G_C893967.pdf

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