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circuit implementation using ROHM DTC014YEBTL NPN digital transistor with internal biasing resistors

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circuit implementation using ROHM DTC014YEBTL NPN digital transistor with internal biasing resistors

Output Voltage(VO(on)) : 150mV

Input Resistor : 10kΩ

Resistor Ratio : 4.7

Number : -

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-416

Mfr. Part # : DTC014YEBTL

Model Number : DTC014YEBTL

Package : SOT-416

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Product Overview

The ROHM DTC014Y series is a family of NPN digital transistors designed for efficient circuit implementation. Featuring built-in biasing resistors (R1 = 10k, R2 = 47k), these transistors simplify inverter circuit configurations by eliminating the need for external input resistors. This design allows for straightforward operation by only requiring the setting of on/off conditions, making circuit design easier. The DTC014Y series is suitable for applications such as inverters, interfaces, and drivers. Complementary PNP types are available in the DTA014Y series.

Product Attributes

Brand: ROHM

Technical Specifications

Model	Package	Package Size	Taping Code	Reel Size (mm)	Tape Width (mm)	Basic Ordering Unit (pcs)	Marking
DTC014YM	SOT-723 (VMT3)	1212	T2L	180	8	8000	44
DTC014YEB	SOT-416FL (EMT3F)	1616	TL	180	8	3000	44
DTC014YUB	SOT-323FL (UMT3F)	2021	TL	180	8	3000	44

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings (Ta = 25C)
Supply voltage	VCC				50	V
Input voltage	VIN		-6		40	V
Output current	IO				70	mA
Collector current	IC(MAX)*1				100	mA
Power dissipation	PD*2	DTC014YM			150	mW
Power dissipation	PD*2	DTC014YEB			150	mW
Power dissipation	PD*2	DTC014YUB			200	mW
Junction temperature	Tj				150
Range of storage temperature	Tstg		-55		+150
Electrical Characteristics (Ta = 25C)
Input voltage (OFF)	VI(off)	VCC = 5V, IO = 100A	-	-	0.5	V
Input voltage (ON)	VI(on)	VO = 0.3V, IO = 5mA	1.7	-	-	V
Output voltage (ON)	VO(on)	IO = 5mA, II = 0.5mA	-	50	150	mV
Input current	II	VI = 5V	-	-	880	A
Output current (OFF)	IO(off)	VCC = 50V, VI = 0V	-	-	500	nA
DC current gain	GI	VO = 10V, IO = 5mA	80	-	-	-
Input resistance	R1		-	7	13	k
Resistance ratio	R2/R1		-	3.7	5.7	-
Transition frequency	fT*1	VCE = 10V, IE = -5mA, f = 100MHz	-	250	-	MHz

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land.

1809172050_ROHM-DTC014YEBTL_C253315.pdf

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