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Nexperia PBSS5350X135 transistor designed for high current power applications and peripheral drivers

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Nexperia PBSS5350X135 transistor designed for high current power applications and peripheral drivers

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 50uA

Pd - Power Dissipation : 1.6W

Transition frequency(fT) : 100MHz

type : PNP

Current - Collector(Ic) : 3A

Collector - Emitter Voltage VCEO : 50V

Operating Temperature : -65℃~+150℃

Description : Bipolar (BJT) Transistor PNP 50V 3A 100MHz Surface Mount SOT-89

Mfr. Part # : PBSS5350X,135

Model Number : PBSS5350X,135

Package : SOT-89

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Product Overview

The Nexperia PBSS5350X is a 50 V, 3 A PNP low VCEsat transistor designed for power management applications. It offers high collector current capability, enhanced efficiency leading to reduced heat generation, and smaller printed-circuit board requirements. This AEC-Q101 qualified transistor is suitable for various applications including DC/DC converters, supply line switching, battery chargers, LCD backlighting, peripheral drivers, and inductive load drivers like relays, buzzers, and motors.

Product Attributes

Brand: Nexperia
Package Type: SOT89
Qualification: AEC-Q101
Complementary NPN: PBSS4350X

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VCEO	Collector-emitter voltage	Open base	-	-	-50	V
IC	Collector current	-	-	-	-3	A
ICM	Peak collector current	Limited by Tj(max)	-	-	-5	A
RCEsat	Collector-emitter saturation resistance	IC = -2 A; IB = -200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C	-	90	135	m
VCBO	Collector-base voltage	Open emitter	-	-	-50	V
VEBO	Emitter-base voltage	Collector open	-	-	-5	V
IB	Base current	-	-	-	-0.5	A
Ptot	Total power dissipation	Tamb 25 C	-	-	1.6	W
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-65	-	150	C
Tstg	Storage temperature	-	-65	-	150	C
Rth(j-a)	Thermal resistance junction to ambient	Various PCB configurations	-	-	225	K/W
Rth(j-sp)	Thermal resistance junction to solder point	-	-	-	16	K/W
V(BR)CBO	Collector-base breakdown voltage	IC = -100 A; IE = 0 A; Tamb = 25 C	-50	-	-	V
V(BR)CEO	Collector-emitter breakdown voltage	IC = -10 mA; IB = 0 A; Tamb = 25 C	-50	-	-	V
V(BR)EBO	Emitter-base breakdown voltage	Collector open; IE = -100 A; IC = 0 A; Tamb = 25 C	-5	-	-	V
ICBO	Collector-base cut-off current	VCB = -50 V; IE = 0 A; Tamb = 25 C	-	-	-100	nA
ICES	Collector-emitter cut-off current	VCB = -50 V; IE = 0 A; Tj = 150 C	-	-	-50	A
IEBO	Emitter-base cut-off current	VEB = -5 V; IC = 0 A; Tamb = 25 C	-	-	-100	nA
hFE	DC current gain	VCE = -2 V; IC = -2 A; pulsed; tp 300 s; 0.02; Tamb = 25 C	130	-	-	-
VCEsat	Collector-emitter saturation voltage	IC = -2 A; IB = -200 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C	-	-	-270	mV
VBEsat	Base-emitter saturation voltage	IC = -2 A; IB = -100 mA; Tamb = 25 C	-	-	-1.1	V
fT	Transition frequency	VCE = -5 V; IC = -100 mA; f = 100 MHz; Tamb = 25 C	100	-	-	MHz
Cc	Collector capacitance	VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C	-	-	35	pF

2410121847_Nexperia-PBSS5350X-135_C551988.pdf

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