Home > Single Bipolar Transistors >

Power Amplification Darlington Transistor Minos MJD127 Featuring Internal Damping Diode For Circuit

Product Categories

Single FETs, MOSFETs [3000]
Bridge Rectifiers [1296]
Single Bipolar Transistors [2284]
JFETs [73]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [550]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1371]
SCRs [158]
SCRs - Modules [48]
TRIACs [559]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

Power Amplification Darlington Transistor Minos MJD127 Featuring Internal Damping Diode For Circuit

Current - Collector Cutoff : 200uA

Pd - Power Dissipation : 65W

DC Current Gain : 1000

type : PNP

Current - Collector(Ic) : 5A

Collector - Emitter Voltage VCEO : 100V

Operating Temperature : -

Description : 65W 1000 PNP 5A 100V TO-252 Single Bipolar Transistors RoHS

Mfr. Part # : MJD127

Model Number : MJD127

Package : TO-252

Contact Now

Product Overview

This Darlington transistor is designed for high-gain circuits and includes an internal damping diode. It is suitable for applications requiring significant amplification.

Product Attributes

Brand: MNS (implied from www.mns-kx.com)
Origin: Shenzhen, China (implied from contact information)

Technical Specifications

Parameter	Symbol	Min	Max	Unit	Test Conditions
Collector-Base Breakdown Voltage	BVCBO	-100		V	IC=-1mA, IE=0
Collector-Emitter Breakdown Voltage	BVCEO	-100		V	IC=-5mA, IB=0
Collector-Emitter Cutoff Current	ICEO		-0.5	mA	VCE=-50V, IB=0
Collector-Base Cutoff Current	ICBO		-0.2	mA	VCB=-100V, IE=0
Emitter-Base Cutoff Current	IEBO		-2.0	mA	VEB=-5V, IC=0
DC Current Gain	HFE	1000			VCE=-3V, IC=-0.5A
Collector-Emitter Saturation Voltage	VCE(sat1)		-2.0	V	IC=-3A, IB=-12mA
Collector-Emitter Saturation Voltage	VCE(sat2)		-4.0	V	IC=-5A, IB=-20mA
Base-Emitter On Voltage	VBE(on)		-2.5	V	VCE=-3V, IC=-3A
Common-Base Output Capacitance	Cob		300	pF	VCB=-10V, IE=0, f=0.1MHz
Storage Temperature	Tstg	-65	150
Junction Temperature	Tj		150
Collector Dissipation Power (Tc=25)	PC		65	W
Collector Dissipation Power (TA=25)	PC		2	W
Collector-Base Voltage	VCBO		-100	V
Collector-Emitter Voltage	VCEO		-100	V
Emitter-Base Voltage	VEBO		-5	V
Collector Current	IC		-5	A
Collector Current (Pulse)	ICP		-8	A
Base Current	IB		-120	mA

Package & Pinout

Package: TO-252

1 - Base (B)
2 - Collector (C)
3 - Emitter (E)

Important Notes:

Exceeding the maximum ratings may cause permanent damage and affect device dependability. Design circuits within absolute maximum ratings.
When installing a heat sink, pay attention to torsional moment and smoothness.
MOSFETs are sensitive to static electricity; protect them during use.
Shenzhen Minos reserves the right to make changes without prior notice.

Contact Information:

Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, No. 4026, Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Phone: 0755-83273777

2410121336_Minos-MJD127_C33129597.pdf

Quality Power Amplification Darlington Transistor Minos MJD127 Featuring Internal Damping Diode For Circuit for sale

Power Amplification Darlington Transistor Minos MJD127 Featuring Internal Damping Diode For Circuit Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!