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NPN Silicon AF Transistor Array Infineon BC817UPNE6327HTSA1 with Two Internally Isolated Transistors

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NPN Silicon AF Transistor Array Infineon BC817UPNE6327HTSA1 with Two Internally Isolated Transistors

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 330mW

Transition frequency(fT) : 170MHz

type : NPN+PNP

Number : 1 NPN + 1 PNP

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 45V

Operating Temperature : -

Description : Bipolar (BJT) Transistor NPN+PNP 45V 500mA 170MHz 330mW Surface Mount SC-74-6

Mfr. Part # : BC817UPNE6327HTSA1

Model Number : BC817UPNE6327HTSA1

Package : SC-74-6

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Product Overview

The BC817UPN is an NPN Silicon AF Transistor Array designed for AF stages and driver applications. It features high current gain, low collector-emitter saturation voltage, and consists of two internally isolated NPN/PNP transistors in a single package. This component is Pb-free and RoHS compliant, qualified according to AEC Q101.

Product Attributes

Brand: Infineon Technologies
Material: NPN Silicon
Certifications: AEC Q101, RoHS compliant
Package: SC74

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
Collector-emitter voltage	VCEO	45	V
Collector-base voltage	VCBO	50	V
Emitter-base voltage	VEBO	5	V
Collector current	IC	500	mA
Peak collector current, tp 10 ms	ICM	1000	mA
Base current	IB	100	mA
Peak base current	IBM	200	mA
Total power dissipation - TS 115 C	Ptot	330	mW
Junction temperature	Tj	150	C
Storage temperature	Tstg	-65 ... 150	C
Junction - soldering point thermal resistance	RthJS	105	K/W	1) For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Collector-emitter breakdown voltage	V(BR)CEO	45	V	IC = 10 mA, IB = 0
Collector-base breakdown voltage	V(BR)CBO	50	V	IC = 10 A, IE = 0
Emitter-base breakdown voltage	V(BR)EBO	5	V	IE = 10 A, IC = 0
Collector-base cutoff current	ICBO	-	A	VCB = 25 V, IE = 0 ; VCB = 25 V, IE = 0 , TA = 150 C (50 A max)
Emitter-base cutoff current	IEBO	-	nA	VEB = 4 V, IC = 0 (100 nA max)
DC current gain	hFE	160 - 400		IC = 100 mA, VCE = 1 V (160 - 250); IC = 300 mA, VCE = 1 V (- 400)
Collector-emitter saturation voltage	VCEsat	-	V	IC = 500 mA, IB = 50 mA (0.7 V max)
Base emitter saturation voltage	VBEsat	-	V	IC = 500 mA, IB = 50 mA (1.2 V max)
Transition frequency	fT	170	MHz	IC = 50 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance	Ccb	-	pF	f = 1 MHz, VBE = 10 V (6 pF max)
Emitter-base capacitance	Ceb	-	pF	VEB = 0.5 V, f = 1 MHz (60 pF max)

2411111059_Infineon-BC817UPNE6327HTSA1_C3199064.pdf

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