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Fast switching power transistor Jilin Sino Microelectronics 3DD13005MD220 for energy saving lighting

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Fast switching power transistor Jilin Sino Microelectronics 3DD13005MD220 for energy saving lighting

Current - Collector Cutoff : 100uA

Pd - Power Dissipation : 75W

Transition frequency(fT) : 4MHz

type : NPN

Current - Collector(Ic) : 4A

Collector - Emitter Voltage VCEO : 400V

Operating Temperature : -

Description : 75W NPN 4A 400V TO-220 Single Bipolar Transistors RoHS

Mfr. Part # : 3DD13005MD-220

Model Number : 3DD13005MD-220

Package : TO-220

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Product Overview

The 3DD13005MD is a high voltage, fast-switching NPN power transistor designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd.
Product Code: 3DD13005MD
Halogen Free: NO
Certifications: RoHS product

Technical Specifications

Order Codes	Marking	Package	Packaging	IC (A)	VCEO (V)	PC (W) TO-220HF	PC (W) TO-220
3DD13005MD-O-HF-N-B	D13005MD	TO-220F	Tube	4	400	35	75
3DD13005MD-O-Z-N-C	D13005MD	TO-220	Bag	4	400	35	75

Parameter	Symbol	Value (min)	Value (typ)	Value (max)	Unit	Test Conditions
Collector-Emitter Voltage (VBE=0)	VCES			700	V
Collector-Emitter Voltage (IB=0)	VCEO	400			V
Emitter-Base Voltage	VEBO			9	V
Collector Current (DC)	IC			4	A
Collector Current (pulse)	ICP			8	A	Pulse Width = 5.0 ms, Duty Cycle < 10%
Base Current (DC)	IB			2	A
Base Current (pulse)	IBP			4	A
Total Dissipation (TO-220HF)	PC			35	W
Total Dissipation (TO-220)	PC			75	W
Junction Temperature	Tj			150
Storage Temperature	Tstg	-55		+150
Collector-Emitter Breakdown Voltage	V(BR)CEO	400			V	IC=10mA,IB=0
Collector-Base Breakdown Voltage	V(BR)CBO	700			V	IC=1mA,IB=0
Emitter-Base Breakdown Voltage	V(BR)EBO	9			V	IE=1mA,IC=0
Collector Cut-off Current	ICBO			100	A	VCB=700V, IE=0
Collector Cut-off Current	ICEO			50	A	VCE=400V,IB=0
Emitter Cut-off Current	IEBO			10	A	VEB=9V, IC=0
DC Current Gain	Hfe(1)	8		50		VCE =10V, IC=500mA
DC Current Gain	Hfe(2)	5				VCE =5V, IC=2A
Collector-Emitter Saturation Voltage	VCE(sat)(1)			1.5	V	IC=1A, IB=0.2A
Collector-Emitter Saturation Voltage	VCE(sat)(2)			2.0	V	IC=4A, IB=1A
Base-Emitter Saturation Voltage	VBE(sat)			1.8	V	IC=2A, IB=0.5A
Fall Time	tf			0.7	S
Storage Time	ts			4	S	VCC=24V IC=2A,IB1=-IB2=0.4A
Transition Frequency	fT	4			MHz	VCE=10V, IC=0.5A

Thermal Resistance (Junction to Case) TO-220HF	Rth(j-c)		3.57		/W
Thermal Resistance (Junction to Case) TO-220	Rth(j-c)		1.67		/W

2411201841_Jilin-Sino-Microelectronics-3DD13005MD-220_C272477.pdf

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