Home > Single Bipolar Transistors >

Jilin Sino Microelectronics 3DD13007MD transistor offering high breakdown voltage for power electronics

Product Categories

Single FETs, MOSFETs [3000]
Bridge Rectifiers [1296]
Single Bipolar Transistors [2284]
JFETs [73]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [550]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1371]
SCRs [158]
SCRs - Modules [48]
TRIACs [559]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

Jilin Sino Microelectronics 3DD13007MD transistor offering high breakdown voltage for power electronics

Emitter-Base Voltage(Vebo) : 9V

Current - Collector Cutoff : 100uA

Pd - Power Dissipation : 80W

Transition frequency(fT) : 4MHz

type : NPN

Current - Collector(Ic) : 8A

Collector - Emitter Voltage VCEO : 400V

Operating Temperature : -

Description : Bipolar (BJT) Transistor NPN 400V 8A 4MHz 80W Through Hole TO-220HF

Mfr. Part # : 3DD13007MD

Model Number : 3DD13007MD

Package : TO-220HF

Contact Now

Product Overview

The 3DD13007MD is a high voltage, fast-switching NPN power transistor designed for various electronic applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lights, electronic ballasts, high-frequency switching power supplies, and general power amplification circuits. This product is RoHS compliant.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd.
Certifications: RoHS

Technical Specifications

Order Code	Marking	Package	IC (A)	VCEO (V)	PC (W)
3DD13007MD-C-B	13007MD	TO-220C	8	400	80
3DD13007MD-C1-B	13007MD	TO-220C-S1	8	400	80
3DD13007MD-FA-B	13007MD	TO-220HF	8	400	45
3DD13007MD-F-B	13007MD	TO-220MF	8	400	45
3DD13007MD-F1-B	13007MD	TO-220MF-K1	8	400	45
3DD13007MD-B-B	13007MD	TO-262	8	400	80
3DD13007MD-S-C	13007MD	TO-263	8	400	80
3DD13007MD-S-A	13007MD	TO-263	8	400	80

Main Characteristics

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage (VBE=0)	VCES	700	V
Collector-Emitter Voltage (IB=0)	VCEO	400	V
Emitter-Base Voltage	VEBO	9	V
Collector Current (DC)	IC	8	A
Collector Current (pulse)	ICP	16	A
Base Current (DC)	IB	4	A
Base Current (pulse)	IBP	8	A
Junction Temperature	Tj	150
Storage Temperature	Tstg	-55~+150

Electrical Characteristics

Parameter	Test Conditions	Min	Typ	Max	Unit
V(BR)CEO	IC=10mA,IB=0	400	-	-	V
V(BR)CBO	IC=1mA,IE=0	700	-	-	V
V(BR)EBO	IE=1mA,IC=0	9	-	-	V
ICBO	VCB=700V, IE=0	-	-	100	A
ICEO	VCE=400V,IB=0	-	-	50	A
IEBO	VEB=9V, IC=0	-	-	10	A
Hfe(1)	VCE =5V, IC=1A	8	-	50	-
Hfe(2)	VCE =5V, IC=5A	5	-	-	-
VCE(sat)(1)	IC=5A, IB=1A	-	-	1.8	V
VCE(sat)(2)	IC=8A, IB=2A	-	-	2.5	V
VBE(sat)	IC=5A, IB=1A	-	-	2.0	V
tf	VCC=24V IC=5A,IB1=-IB2=1A	-	-	0.7	S
ts	-	-	-	4	S
fT	VCE=10V, IC=0.5A	4	-	-	MHz

2409280102_Jilin-Sino-Microelectronics-3DD13007MD_C2693273.pdf

Quality Jilin Sino Microelectronics 3DD13007MD transistor offering high breakdown voltage for power electronics for sale

Jilin Sino Microelectronics 3DD13007MD transistor offering high breakdown voltage for power electronics Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!