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Silicon bipolar RF transistor Infineon BFR193WH6327 optimized for linear broadband amplifier performance

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Silicon bipolar RF transistor Infineon BFR193WH6327 optimized for linear broadband amplifier performance

Emitter-Base Voltage(Vebo) : 2V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 580mW

Transition frequency(fT) : 8GHz

type : NPN

Current - Collector(Ic) : 80mA

Collector - Emitter Voltage VCEO : 12V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor NPN 12V 80mA 8GHz 580mW Surface Mount SOT-323

Mfr. Part # : BFR193WH6327

Model Number : BFR193WH6327

Package : SOT-323

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Product Overview

The BFR193W is a low-noise silicon bipolar RF transistor designed for high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It features a transition frequency (fT) of 8 GHz and a minimum noise figure (NFmin) of 1 dB at 900 MHz. This Pb-free (RoHS compliant) component is available with an AEC-Q101 qualification report. It is an ESD sensitive device and requires careful handling.

Product Attributes

Brand: Infineon Technologies
Model: BFR193W
Package: SOT323
Certifications: AEC-Q101 (Qualification report available), RoHS compliant
Material: Silicon Bipolar

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector-emitter voltage	VCEO	12	V
Collector-emitter voltage	VCES	20	V
Collector-base voltage	VCBO	20	V
Emitter-base voltage	VEBO	2	V
Collector current	IC	80	mA
Base current	IB	10	mA
Total power dissipation	Ptot	580	mW	TS 63C
Junction temperature	TJ	150	C
Storage temperature	TStg	-55 ... 150	C
Thermal Resistance Junction - soldering point	RthJS	150	K/W	TS is measured on the collector lead at the soldering point to the pcb
Collector-emitter breakdown voltage	V(BR)CEO	12	V	IC = 1 mA, IB = 0
Collector-emitter cutoff current	ICES	100	A	VCE = 20 V, VBE = 0
Collector-base cutoff current	ICBO	100	nA	VCB = 10 V, IE = 0
Emitter-base cutoff current	IEBO	1	A	VEB = 1 V, IC = 0
DC current gain	hFE	70 - 140	-	IC = 30 mA, VCE = 8 V, pulse measured
Transition frequency	fT	6 - 8	GHz	IC = 50 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance	Ccb	0.74	pF	VCB = 10 V, f = 1 MHz, VBE = 0 , emitter grounded
Collector emitter capacitance	Cce	0.28	pF	VCE = 10 V, f = 1 MHz, VBE = 0 , base grounded
Emitter-base capacitance	Ceb	1.8	pF	VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded
Minimum noise figure	NFmin	1 - 1.6	dB	IC = 10 mA, VCE = 8 V, ZS = ZSopt, f = 900 MHz / 1.8 GHz
Power gain, maximum available	Gma	16 - 10.5	-	IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt, f = 900 MHz / 1.8 GHz
Transducer gain	\|S21e\|	13.5 - 8	dB	IC = 30 mA, VCE = 8 V, ZS = ZL = 50, f = 900 MHz / 1.8 GHz
Third order intercept point at output	IP3	30	dBm	IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz
1dB Compression point	P-1dB	13	dBm	IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz

2410121734_Infineon-BFR193WH6327_C152683.pdf

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