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Plastic Encapsulated Transistor Guangdong Hottech BC856C SOT23 Package Ideal for Amplifier Circuits

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Plastic Encapsulated Transistor Guangdong Hottech BC856C SOT23 Package Ideal for Amplifier Circuits

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 200mW

Transition frequency(fT) : 100MHz

type : PNP

Current - Collector(Ic) : 100mA

Collector - Emitter Voltage VCEO : 65V

Description : Bipolar (BJT) Transistor PNP 65V 0.1A 100MHz 0.2W Surface Mount SOT-23

Mfr. Part # : BC856C

Model Number : BC856C

Package : SOT-23

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Product Overview

Plastic-encapsulated transistors ideally suited for automatic insertion, designed for switching and AF amplifier applications. Available in various models with distinct marking codes.

Product Attributes

Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
Material: Plastic-Encapsulate
Package: SOT-23

Technical Specifications

Parameter	Symbol	BC856	BC857	BC858	Unit	Conditions
Collector-Base Voltage	VCBO	-80	-50	-30	V	TA=25 unless otherwise noted
Collector-Emitter Voltage	VCEO	-65	-45	-30	V	TA=25 unless otherwise noted
Emitter-Base Voltage	VEBO	-5			V	TA=25 unless otherwise noted
Collector Current - Continuous	IC	0.1			A	TA=25 unless otherwise noted
Collector Power Dissipation	PC	0.2			W	TA=25 unless otherwise noted
Junction Temperature	TJ	150			C	TA=25 unless otherwise noted
Storage Temperature	Tstg	-55 to +150			C	TA=25 unless otherwise noted
Collector-base breakdown voltage	VCBO	-80	-50	-30	V	IC= -10A, IE=0
Collector-emitter breakdown voltage	VCEO	-65	-45	-30	V	IC= -10mA, IB=0
Emitter-base breakdown voltage	VEBO	-5			V	IE= -1A, IC=0
Collector cut-off current	ICBO	-0.1	-0.1	-0.1	A	VCB= -70 V (BC856), VCB= -45 V (BC857), VCB= -25 V (BC858), IE=0
Collector cut-off current	ICEO	-0.1	-0.1	-0.1	A	VCE= -60 V (BC856), VCE= -40 V (BC857), VCE= -25 V (BC858), IB=0
Emitter cut-off current	IEBO	-0.1			A	VEB= -5 V , IC=0
DC current gain	hFE	125-250	220-475	420-800		VCE= -5V, IC= -2mA
Collector-emitter saturation voltage	VCE(sat)	-0.5			V	IC=-100mA, IB= -5 mA
Base-emitter saturation voltage	VBE(sat)	-1.1			V	IC= -100mA, IB= -5mA
Transition frequency	fT	100			MHz	VCE= -5 V, IC= -10mA, f=100MHz
Collector capacitance	Cob	4.5			pF	VCB=-10V, f=1MHz

2410122025_Guangdong-Hottech-BC856C_C181145.pdf

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