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Electronic Components Guangdong Hottech BC847CW NPN Bipolar Transistor for Surface Mount Applications

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Electronic Components Guangdong Hottech BC847CW NPN Bipolar Transistor for Surface Mount Applications

Emitter-Base Voltage(Vebo) : 6V

Current - Collector Cutoff : 15nA

Pd - Power Dissipation : 150mW

Transition frequency(fT) : 100MHz

Current - Collector(Ic) : 100mA

Collector - Emitter Voltage VCEO : 45V

Description : 150mW 100mA 45V SOT-323 Single Bipolar Transistors RoHS

Mfr. Part # : BC847CW

Model Number : BC847CW

Package : SOT-323

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Product Overview

The BC847W is an NPN bipolar transistor designed for surface mount applications. It offers excellent hFE linearity and high collector current capabilities, making it a complementary part to the BC857W. This device is suitable for various electronic circuits requiring reliable transistor performance.

Product Attributes

Brand: HOTTECH
Origin: GUANGDONG
Case Material: Molded Plastic
Flammability Classification: UL 94V-0
Complementary To: BC857W

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector-Base Voltage	VCBO	50	V
Collector-Emitter Voltage	VCEO	45	V
Emitter-Base Voltage	VEBO	6	V
Collector Current	IC	100	mA
Collector Power Dissipation	PC	150	mW	TA = 25C
Thermal Resistance Junction To Ambient	RJA	833	C/W
Junction Temperature	TJ	150	C
Storage Temperature	TSTG	-55 ~+150	C
Collector-base breakdown voltage	V(BR)CBO	50	V	IC=10uAIE=0
Collector-emitter breakdown voltage	V(BR)CEO	45	V	IC=10mAIB=0
Emitter-base breakdown voltage	V(BR)EBO	6	V	IE=1uAIC=0
Collector cut-off current	ICBO	15	nA	VCB=30V, IE=0
DC current gain (hFE)	hFE	110		VCE=5V, IC=2mA
DC current gain (hFE)	hFE	800		VCE=5V, IC=2mA
DC current gain (hFE)	hFE	150		VCE=5V, IC=10uA
Collector-emitter saturation voltage	VCE(sat)	0.25	V	IC=10mAIB=0.5mA
Collector-emitter saturation voltage	VCE(sat)	0.6	V	IC=100mAIB=5mA
Base-emitter saturation voltage	VBE(sat)	0.7	V	IC=10mAIB=0.5mA
Base-emitter saturation voltage	VBE(sat)	0.9	V	IC=100mAIB=5mA
Base-emitter voltage	VBE(ON)	0.58 - 0.77	V	VCE=5V, IC=2mA to 10mA
Transition frequency	fT	100	MHz	VCE=5V,IC=10mA,f=100MHz
Collector output capacitance	Cob	8	pF	VCB=10V, f=1MHz
Noise figure	NF	10	dB	VCE=5V, IC=0.2mA,RS=2k f=1KMHz,BW=200Hz

2507111630_Guangdong-Hottech-BC847CW_C49238176.pdf

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