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Surface Mount PNP Bipolar Transistor Guangdong Hottech PXT8550 SOT89 Package Electronic Component

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Surface Mount PNP Bipolar Transistor Guangdong Hottech PXT8550 SOT89 Package Electronic Component

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 500mW

Transition frequency(fT) : 100MHz

type : PNP

Number : 1 PNP

Current - Collector(Ic) : 1.5A

Collector - Emitter Voltage VCEO : 25V

Operating Temperature : -

Description : Bipolar (BJT) Transistor PNP 25V 1.5A 100MHz 500mW Surface Mount SOT-89

Mfr. Part # : PXT8550

Model Number : PXT8550

Package : SOT-89

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Product Overview

The PXT8550 is a PNP bipolar transistor designed for surface mount applications. It offers complementary characteristics to the PXT8050 and comes in a SOT-89 package. This device is suitable for various electronic applications requiring a PNP transistor with specific electrical and thermal characteristics.

Product Attributes

Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
Model: PXT8550
Type: BIPOLAR TRANSISTOR (PNP)
Case: SOT-89
Case Material: Molded Plastic
UL Flammability Classification Rating: 94V-0
Complementary to: PXT8050
Marking: Y2

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector-Base Voltage	VCBO	-40	V
Collector-Emitter Voltage	VCEO	-25	V
Emitter-Base Voltage	VEBO	-5	V
Collector Current	IC	-1.5	A
Collector Power Dissipation	PC	500	mW	(TA = 25C)
Thermal Resistance Junction To Ambient	RJA	250	C/W
Junction Temperature	TJ	150	C
Storage Temperature	TSTG	-55 ~+150	C
Collector-base breakdown voltage	V(BR)CBO	-40	V	IC=-100uAIE=0
Collector-emitter breakdown voltage	V(BR)CEO	-25	V	IC=-0.1mAIB=0
Emitter-base breakdown voltage	V(BR)EBO	-5	V	IE=-100uAIC=0
Collector cut-off current	ICBO	-0.1	uA	VCB=-40V, IE=0
Collector cut-off current	ICEO	-0.1	uA	VCE=-20V, IB=0
Emitter cut-off current	IEBO	-0.1	uA	VEB=-5V, IC=0
DC current gain	hFE1	85		VCE=-1V, IC=-100mA
DC current gain	hFE2	40		VCE=-1V, IC=-800mA
Collector-emitter saturation voltage	VCE(sat)	-0.5	V	IC=-800mAIB=-80mA
Base-emitter saturation voltage	VBE(sat)	-1.2	V	IC=-800mAIB=-80mA
Base-emitter on voltage	VBE(ON)	-1	V	VCE=-1V,IC=-10mA
Base-emitter positive favor voltage	VBEF	-1.55	V	IB=-1A
Transition frequency	fT	100	MHz	VCE=-10V,IC=-50mA
Collector output capacitance	Cob	20	pF	VCB=-10V, IE=0, f=1MHz

2410122030_Guangdong-Hottech-PXT8550_C181183.pdf

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