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PNP Transistor SOT89 3L Package Featuring High Diode PXT8550 for Electronic Applications

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PNP Transistor SOT89 3L Package Featuring High Diode PXT8550 for Electronic Applications

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 500mW

Transition frequency(fT) : 100MHz

type : PNP

Number : 1 PNP

Current - Collector(Ic) : 1.5A

Collector - Emitter Voltage VCEO : 25V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor PNP 25V 1.5A 100MHz 0.5W Surface Mount SOT-89-3L

Mfr. Part # : PXT8550

Model Number : PXT8550

Package : SOT-89-3L

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Product Overview

The PXT8550 is a PNP transistor in a SOT-89-3L plastic-encapsulated package. It serves as a compliment to the PXT8050 and is designed for various electronic applications requiring high-performance transistor characteristics.

Product Attributes

Brand: HIGH DIODE SEMICONDUCTOR
Package Type: SOT-89-3L
Molding Compound: Green

Technical Specifications

Symbol	Parameter	Value	Unit	Test Conditions	Min	Max
MAXIMUM RATINGS	Collector-Base Voltage (VCBO)	-40	V
	Collector-Emitter Voltage (VCEO)	-25	V
	Emitter-Base Voltage (VEBO)	-5	V
	Collector Current (IC) -Continuous	-1.5	A
	Collector Power Dissipation (PC)	0.5	W
ELECTRICAL CHARACTERISTICS	Collector-Base Breakdown Voltage (V(BR)CBO)	-40	V	IC = -100A, IE=0	-40
	Collector-Emitter Breakdown Voltage (V(BR)CEO)	-25	V	IC = -0.1mA, IB=0	-25
	Emitter-Base Breakdown Voltage (V(BR)EBO)	-5	V	IE = -100A, IC=0	-5
	Collector Cut-off Current (ICBO)	-0.1	A	CB V = -40 V,IE=0		-0.1
	Collector Cut-off Current (ICEO)	-0.1	A	CE V = -20V, IB=0		-0.1
	Emitter Cut-off Current (IEBO)	-0.1	A	EB V = -5V, IC=0		-0.1
	DC Current Gain (hFE(1))	200 - 350		CE V = -1V, IC= -100mA	200	350
	DC Current Gain (hFE(2))	40		CE V = -1V, IC= -800mA	40
ELECTRICAL CHARACTERISTICS (cont.)	Collector-Emitter Saturation Voltage (VCE(sat))	-0.5	V	CI =-800mA, IB= -80mA		-0.5
ELECTRICAL CHARACTERISTICS (cont.)	Base-Emitter Saturation Voltage (VBE(sat))	-1.2	V	CI =-800mA, IB= -80mA		-1.2
ELECTRICAL CHARACTERISTICS (cont.)	Base-Emitter On Voltage (VBE(on))	-1	V	Ic=-1V,VCE=-10mA		-1
ELECTRICAL CHARACTERISTICS (cont.)	Base-Emitter Positive Favor Voltage (VBEF)	-1.55	V	BI =-1A		-1.55
ELECTRICAL CHARACTERISTICS (cont.)	Transition Frequency (fT)	100	MHz	VCE= -10V, IC= -50mA	100
ELECTRICAL CHARACTERISTICS (cont.)	Output Capacitance (Cob)	20	pF	CB V =-10V,IE=0,f=1MHz		20
THERMAL CHARACTERISTICS	Operation Junction and Storage Temperature Range (TJ,Tstg)	-55~150			-55	150
THERMAL CHARACTERISTICS	Thermal Resistance From Junction To Ambient (R JA)	250	/W			250

2410121522_High-Diode-PXT8550_C22458625.pdf

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