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Plastic Encapsulated Transistor High Diode MMBT2907A for Signal Amplification and Switching Applications

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Plastic Encapsulated Transistor High Diode MMBT2907A for Signal Amplification and Switching Applications

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 20nA

Pd - Power Dissipation : 250mW

Transition frequency(fT) : 200MHz

type : NPN

Current - Collector(Ic) : 600mA

Collector - Emitter Voltage VCEO : 60V

Operating Temperature : -

Description : Bipolar (BJT) Transistor NPN 60V 600mA 200MHz 250mW Surface Mount SOT-23

Mfr. Part # : MMBT2907A

Model Number : MMBT2907A

Package : SOT-23

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Product Overview

The MMBT2907A is a plastic-encapsulated transistor featuring an epitaxial planar die construction. It serves as a complementary NPN type to the MMBT2222A. This device is suitable for various electronic applications requiring signal amplification and switching.

Product Attributes

Brand: High Diode Semiconductor
Origin: Not specified
Material: Plastic-Encapsulate
Color: Not specified
Certifications: Not specified

Technical Specifications

Symbol	Parameter	Value	Unit	Test Conditions
V_CEO	Collector-Emitter Voltage	-60	V
V_EBO	Emitter-Base Voltage	-5	V
I_C	Collector Current	-600	mA
P_C	Collector Power Dissipation	250	mW
R_JA	Thermal Resistance From Junction To Ambient	500	/W
T_j	Junction Temperature	150
T_stg	Storage Temperature	-55+150
V(BR)_CBO	Collector-base breakdown voltage	-60	V	I_C=-10A,I_E=0
V(BR)_CEO*	Collector-emitter breakdown voltage	-60	V	I_C=-10mA,I_B=0
V(BR)_EBO	Emitter-base breakdown voltage	-5	V	I_E=-10A,I_C=0
I_CBO	Collector cut-off current	-20	nA	V_CB=-50V,I_E=0
I_EBO	Base cut-off current	-10	nA	V_EB=-3V, I_C=0
I_CEX	Collector cut-off current	-50	nA	V_CE=-30 V, V_BE(off) =-0.5V
h_FE	DC current gain	100-300		V_CE=-10V,I_C=-150mA
		75		V_CE=-10V,I_C=-0.1mA
		100		V_CE=-10V,I_C=-1mA
		100		V_CE=-10V,I_C=-10mA
		50		V_CE=-10V,I_C=-500mA
V_CE(sat)*	Collector-emitter saturation voltage	-0.4	V	I_C=-150mA,I_B=-15mA
V_CE(sat)*	Collector-emitter saturation voltage	-1.6	V	I_C=-500mA,I_B=-50mA
V_BE(sat)*	Base-emitter saturation voltage	-1.3	V	I_C=-150mA,I_B=-15mA
V_BE(sat)*	Base-emitter saturation voltage	-2.6	V	I_C=-500mA,I_B=-50mA
f_T	Transition frequency	200	MHz	V_CE=-20V,I_C=-50mA,f=100MHz
t_d	Delay time	10	ns
t_r	Rise time	25	ns	V_CE=-30V,I_C=-150mA,B1=-15mA
t_S	Storage time	225	ns
t_f	Fall time	60	ns	V_CE=-6V,I_C=-150mA, I_B1=- I_B2=- 15mA

2410121434_High-Diode-MMBT2907A_C466639.pdf

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