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amplification and switching transistor MDD Microdiode Semiconductor MMDT3904 dual transistor NPN NPN

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amplification and switching transistor MDD Microdiode Semiconductor MMDT3904 dual transistor NPN NPN

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 50nA

Pd - Power Dissipation : 200mW

Transition frequency(fT) : 300MHz

Current - Collector(Ic) : 200mA

Collector - Emitter Voltage VCEO : 40V

Description : 200mW 200mA 40V SOT-363 Single Bipolar Transistors RoHS

Mfr. Part # : MMDT3904

Model Number : MMDT3904

Package : SOT-363

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Product Overview

The MMDT3904 is a DUAL TRANSISTOR (NPN+NPN) featuring epitaxial planar die construction. It is ideal for low power amplification and switching applications, offering high stability and reliability.

Product Attributes

Brand: Microdiode
Marking: K6N

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				60	V
Collector-Emitter Voltage	VCEO				40	V
Emitter-Base Voltage	VEBO				5	V
Collector Current	IC				200	mA
Collector Power Dissipation	PC				200	mW
Thermal Resistance Junction To Ambient	RJA			625		/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC=10A, IE=0	60			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	40			V
Emitter-base breakdown voltage	V(BR)EBO	IE=10A, IC=0	5			V
Collector cut-off current	ICEX	CE V =30V, VEB(off)=3V			50	nA
Collector cut-off current	ICBO	VCB=30V, IE=0			50	nA
Emitter cut-off current	IEBO	EB V =5V, IC=0			50	nA
DC current gain	hFE(1)	VCE=1V, IC=1mA	40
	hFE(2)	VCE=1V, IC=10mA	70
	hFE(3)	VCE=1V, IC=50mA	100
	hFE(4)	VCE=1V, IC=10mA, IB=1mA		0.2		V
	hFE(5)	VCE=1V, IC=50mA, IB=5mA		0.3		V
Collector-emitter saturation voltage	VCE(sat)	IC=10mA, IB=1mA		0.85		V
Collector-emitter saturation voltage	VCE(sat)	IC=50mA, IB=5mA		0.65		V
Base-emitter saturation voltage	VBE(sat)	IC=10mA, IB=1mA				V
Base-emitter saturation voltage	VBE(sat)	IC=50mA, IB=5mA		0.95		V
Transition frequency	fT	CE V =20V,IC=10mA, f=100MHz		300		MHz
Collector output capacitance	Cob	VCB=30V, IE=0, f=1MHz		4		pF
Noise figure	NF	VCE=5V, IC=0.1mA, f=1KHz,RS=1K		5		dB
Delay time	td	VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA Pulse test: pulse width300us,duty cycle2.0%		35		ns
Rise time	tr	VCC=3V, VBE(off)=0.5V IC=10mA, IB1=1mA Pulse test: pulse width300us,duty cycle2.0%		35		ns
Storage time	ts	CC V =3V, IC=10mA, IB1= IB2=1mA Pulse test: pulse width300us,duty cycle2.0%		200		ns
Fall time	tf	CC V =3V, IC=10mA, IB1= IB2=1mA Pulse test: pulse width300us,duty cycle2.0%		50		ns

2507221720_MDD-Microdiode-Semiconductor-MMDT3904_C49383124.pdf

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