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Electronic Component NPN Transistor luJing MMBTA42 Featuring Low Collector Emitter Saturation Voltage

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Electronic Component NPN Transistor luJing MMBTA42 Featuring Low Collector Emitter Saturation Voltage

Description : SOT-23 Single Bipolar Transistors RoHS

Mfr. Part # : MMBTA42

Model Number : MMBTA42

Package : SOT-23

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Product Overview

The MMBTA42 is a high breakdown voltage NPN transistor with low collector-emitter saturation voltage. It is complementary to the MMBTA92 (PNP) and is designed for various electronic applications. The device comes in a SOT-23 molded plastic package, suitable for any mounting position.

Product Attributes

Brand: Lujingsemi
Origin: China
Material: Plastic-Encapsulate
Package: SOT-23
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Rating Unit	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO	300					V
Collector-Emitter Voltage	VCEO	300					V
Emitter-Base Voltage	VEBO	5					V
Collector Current - Continuous	IC	500					mA
Collector Power Dissipation	PC	350					mW
Thermal Resistance Junction to Ambient	RJA	357					/W
Junction Temperature	TJ	150
Storage Temperature Range	Tstg	-55 to 150					V
Collector-base breakdown voltage	VCBO	300	Ic= 100 A IE= 0			300
Collector- emitter breakdown voltage	VCEO	300	Ic= 1 mA IB= 0			300
Emitter - base breakdown voltage	VEBO	5	IE= 100 XA IC= 0			5
Collector-base cut-off current	ICBO	0.1	VCB= 200 V , IE= 0			0.1
Emitter cut-off current	IEBO	0.1	VEB= 5V , IC=0			0.1
Collector-emitter saturation voltage	VCE(sat)	0.2	IC= 20 mA, IB= 2mA		0.2
Base - emitter saturation voltage	VBE(sat)	0.9	IC= 20mA, IB= 2mA		0.9
DC current gain (hfe)	hfe		VCE= 10V, IC= 1mA	60
DC current gain (hfe)	hfe		VCE= 10V, IC= 10mA		100
DC current gain (hfe)	hfe		VCE= 10V, IC= 30mA	60
Transition frequency	fT	50	VCE= 20V, IC= 10mA, f=30MHz		50		MHz
hfe(2) Classification			Type MMBTA42-L	100		200
hfe(2) Classification			Type MMBTA42	100		300

2512041545_luJing-MMBTA42_C53058845.pdf

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