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PNP Bipolar Transistor MDD Microdiode Semiconductor SS8550 Suitable for General Purpose Amplification

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PNP Bipolar Transistor MDD Microdiode Semiconductor SS8550 Suitable for General Purpose Amplification

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 300mW

Transition frequency(fT) : 100MHz

type : PNP

Number : 1 PNP

Current - Collector(Ic) : 1.5A

Collector - Emitter Voltage VCEO : 25V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor PNP 25V 1.5A 100MHz 0.3W Surface Mount SOT-23

Mfr. Part # : SS8550

Model Number : SS8550

Package : SOT-23

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Product Overview

The SS8550 is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. It offers high collector current capability and is complementary to the SS8050 transistor. Encapsulated in a SOT-23 package, it is suitable for various electronic circuits.

Product Attributes

Brand: Microdiode
Complementary To: SS8050
Marking: Y2

Technical Specifications

Parameter	Symbol	Test Conditions	Value	Unit
Collector-Base Breakdown Voltage	V(BR)CBO	IC=-100A, IE=0	-40	V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC=-0.1mA, IB=0	-25	V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE=-100A, IC=0	-5	V
Collector Current-Continuous	IC		-1.5	A
Collector Power Dissipation	PC	(Ta=25 unless otherwise noted)	0.3	W
Junction Temperature	Tj		150
Storage Temperature	Tstg		-55+150
Collector Cut-off Current	ICBO	VCB=-40V, IE=0	-0.1	A
Emitter Cut-off Current	IEBO	VEB=-5V, IC=0	-0.1	A
DC Current Gain	hFE	VCE=-1V, IC=-100mA	120-400
Collector-Emitter Saturation Voltage	VCE(sat)	IC=-800mA, IB=-80mA	-0.5	V
Base-Emitter Saturation Voltage	VBE(sat)	IC=-800mA, IB=-80mA	-1.2	V
Transition Frequency	fT	VCE=-10V, IC=-50mA, f=30MHz	100	MHz
Collector Output Capacitance	Cob	VCB=-10V, IE=0, f=1MHz	20	pF
Thermal Resistance From Junction To Ambient	RJA		417	/W

2411211950_MDD-Microdiode-Semiconductor-SS8550_C364314.pdf

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