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MDD Microdiode Semiconductor MMBT3906 PNP Transistor SOT523 Package Ideal for Switching Applications

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MDD Microdiode Semiconductor MMBT3906 PNP Transistor SOT523 Package Ideal for Switching Applications

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 200mW

Transition frequency(fT) : 300MHz

type : PNP

Number : 1 PNP

Current - Collector(Ic) : 200mA

Collector - Emitter Voltage VCEO : 40V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor PNP 40V 200mA 300MHz 200mW Surface Mount SOT-23

Mfr. Part # : MMBT3906

Model Number : MMBT3906

Package : SOT-23

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Product Overview

The MMBT3906T is a PNP bipolar transistor in a SOT-523 package, designed for medium power amplification and switching applications. It serves as a complementary device to the MMBT3904T, offering a small surface mount package ideal for compact electronic designs.

Product Attributes

Brand: Microdiode
Complementary to: MMBT3904T
Package Type: SOT-523
Encapsulation: Plastic
Marking: 3N

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				-40	V
Collector-Emitter Voltage	VCEO				-40	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current	IC				-0.2	A
Collector Power Dissipation	PC				0.15	W
Thermal Resistance (Junction to Ambient)	RJA			833		/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	CI =-10A, IE=0	-40			V
Collector-emitter breakdown voltage	V(BR)CEO	CI =-1mA, IB=0	-40			V
Emitter-base breakdown voltage	V(BR)EBO	EI =-10A, IC=0	-5			V
Collector cut-off current	ICBO	CB V =-40V, IE=0			-100	nA
Emitter cut-off current	IEBO	EB V =-5V, IC=0			-100	nA
DC current gain	hFE(1)	VCE=-1V, IC=-0.1mA	60
	hFE(2)	VCE=-1V, IC=-1mA		80
	hFE(3)	VCE=-1V, IC=-10mA		300
Collector-emitter saturation voltage	VCE(sat)1	IC=-10mA, IB=-1mA		-0.25		V
Collector-emitter saturation voltage	VCE(sat)2	IC=-50mA, IB=-5mA		-0.40		V
Base-emitter saturation voltage	VBE(sat)1	IC=-10mA, IB=-1mA		-0.85		V
Base-emitter saturation voltage	VBE(sat)2	IC=-50mA, IB=-5mA		-0.95		V
Transition frequency	fT	VCE=-20V,IC=-10mA,f=100MHz	250			MHz
Collector output capacitance	Cob	VCB=-5V,IE=0,f=1MHz		4.5		pF
Collector cut-off current	ICEX	VCE=-1V, IC=-50mA			-50	nA
Collector cut-off current	ICEX	VCE=-2V, IC=-100mA			-100	nA
DC current gain	hFE(4)	VCE=-1V, IC=-50mA		60
DC current gain	hFE(5)	VCE=-2V, IC=-100mA		30
Input capacitance	Cib	VCE=-5V,IC=0.1mA		10		pF
Noise Figure	NF	VCC=-3V, VBE(off)=-0.5V		4		dB
Transition time	td	IC=-10mA, IB1=-1mA		35		ns
Rise time	tr	VCC=-3V, IC=-10mA, IB1=IB2-1mA		35		ns
Storage time	ts	VCE=-30V,VEB(off)=-3V		75		ns
Fall time	tf			225		ns

2411211939_MDD-Microdiode-Semiconductor-MMBT3906_C364311.pdf

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