Home > Single Bipolar Transistors >

Compact surface mount PNP transistor Nexperia BC856B215 for switching and amplification applications

Product Categories

Single FETs, MOSFETs [3000]
Bridge Rectifiers [1296]
Single Bipolar Transistors [2284]
JFETs [73]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [550]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1371]
SCRs [158]
SCRs - Modules [48]
TRIACs [559]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

Compact surface mount PNP transistor Nexperia BC856B215 for switching and amplification applications

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 15nA

Pd - Power Dissipation : 250mW

Transition frequency(fT) : 100MHz

type : PNP

Number : 1 PNP

Current - Collector(Ic) : 100mA

Collector - Emitter Voltage VCEO : 65V

Operating Temperature : -65℃~+150℃

Description : Bipolar (BJT) Transistor PNP 65V 100mA 100MHz 250mW Surface Mount SOT-23

Mfr. Part # : BC856B,215

Model Number : BC856B,215

Package : SOT-23

Contact Now

Product Overview

The Nexperia BC856, BC857, and BC858 series are PNP general-purpose transistors designed for a wide range of switching and amplification applications. These transistors are housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package, offering low current (max. 100 mA) and low voltage (max. 65 V) capabilities. They are suitable for general-purpose use where reliable performance in a small form factor is required.

Product Attributes

Brand: Nexperia
Package Type: SOT23 (TO-236AB)
Material: Plastic
Transistor Type: PNP General-Purpose

Technical Specifications

Model	NPN Complement	VCEO (Max)	IC (Max)	VCBO (Max)	hFE Range (Typical)	Marking Code
BC856	BC846	-65 V	100 mA	-80 V	125 - 475	3D%
BC856A	BC846A	-65 V	100 mA	-80 V	125 - 250	3A%
BC856B	BC846B	-65 V	100 mA	-80 V	220 - 475	3B%
BC857	BC847	-45 V	100 mA	-50 V	125 - 800	3H%
BC857A	BC847A	-45 V	100 mA	-50 V	125 - 250	3E%
BC857B	BC847B	-45 V	100 mA	-50 V	220 - 475	3F%
BC857C	BC847C	-45 V	100 mA	-50 V	420 - 800	3G%
BC858B	BC848B	-30 V	100 mA	-30 V	220 - 475	3K%

Parameter	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage (VCEO)	BC856; BC856A; BC856B	-	-	-65	V
Collector-Emitter Voltage (VCEO)	BC857; BC857A; BC857B; BC857C	-	-	-45	V
Collector-Emitter Voltage (VCEO)	BC858B (open base)	-	-	-30	V
Collector Current (IC)	Tamb = 25 C unless otherwise specified	-	-	-100	mA
Peak Collector Current (ICM)	Tamb = 25 C unless otherwise specified	-	-	-200	mA
Collector-Base Voltage (VCBO)	BC856; BC856A; BC856B	-	-	-80	V
Collector-Base Voltage (VCBO)	BC857; BC857A; BC857B; BC857C	-	-	-50	V
Collector-Base Voltage (VCBO)	BC858B (open emitter)	-	-	-30	V
Emitter-Base Voltage (VEBO)	Open collector	-	-	-5	V
Total Power Dissipation (Ptot)	Tamb 25 C	-	-	250	mW
Junction Temperature (Tj)	-	-	-	150	C
Ambient Temperature (Tamb)	-	-65	-	150	C
Storage Temperature (Tstg)	-	-65	-	150	C
Collector-Base Breakdown Voltage (V(BR)CBO)	BC856; BC856A; BC856B	-80	-	-	V
Collector-Base Breakdown Voltage (V(BR)CBO)	BC857; BC857A; BC857B; BC857C	-50	-	-	V
Collector-Base Breakdown Voltage (V(BR)CBO)	BC858B (IC = -100 A; IE = 0 A)	-30	-	-	V
Collector-Emitter Breakdown Voltage (V(BR)CEO)	BC856; BC856A; BC856B	-65	-	-	V
Collector-Emitter Breakdown Voltage (V(BR)CEO)	BC857; BC857A; BC857B; BC857C	-45	-	-	V
Collector-Emitter Breakdown Voltage (V(BR)CEO)	BC858B (IC = -2 mA; IB = 0 A)	-30	-	-	V
Emitter-Base Breakdown Voltage (V(BR)EBO)	IC = 0 A; IE = -100 A	-5	-	-	V
Collector-Base Cut-off Current (ICBO)	VCB = -30 V; IE = 0 A	-	-1	-15	nA
Collector-Base Cut-off Current (ICBO)	VCB = -30 V; IE = 0 A; Tj = 150 C	-	-	-4	A
Emitter-Base Cut-off Current (IEBO)	VEB = -5 V; IC = 0 A	-	-	-100	nA
Collector Capacitance (Cc)	VCB = -10 V; IE = ie = 0 A; f = 1 MHz	-	4.5	-	pF
Transition Frequency (fT)	VCE = -5 V; IC = -10 mA; f = 100 MHz	100	-	-	MHz
Noise Figure (NF)	IC = -200 A; VCE = -5 V; RS = 2 k; f = 1 kHz; B = 200Hz	-	2	10	dB

2410121938_Nexperia-BC856B-215_C109310.pdf

Quality Compact surface mount PNP transistor Nexperia BC856B215 for switching and amplification applications for sale

Compact surface mount PNP transistor Nexperia BC856B215 for switching and amplification applications Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!