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MDD Microdiode Semiconductor MMBT3904T NPN Transistor SOT523 Package Medium Power Amplification Switching

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MDD Microdiode Semiconductor MMBT3904T NPN Transistor SOT523 Package Medium Power Amplification Switching

Emitter-Base Voltage(Vebo) : 6V

Pd - Power Dissipation : 150mW

Transition frequency(fT) : 300MHz

Number : 1 NPN

Current - Collector(Ic) : 200mA

Collector - Emitter Voltage VCEO : 40V

Description : 150mW 200mA 40V SOT-523-3 Single Bipolar Transistors RoHS

Mfr. Part # : MMBT3904T

Model Number : MMBT3904T

Package : SOT-523-3

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Product Overview

The MMBT3904T is an NPN transistor in a small surface mount SOT-523 package. It is ideal for medium power amplification and switching applications and is complementary to the MMBT3906T.

Product Attributes

Brand: Microdiode
Complementary to: MMBT3906T
Package: SOT-523

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				60	V
Collector-Emitter Voltage	VCEO				40	V
Emitter-Base Voltage	VEBO				6	V
Collector Current	IC				0.2	A
Collector Power Dissipation	PC				0.15	W
Thermal Resistance Junction To Ambient	RJA			833		/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC =10A, IE=0			60	V
Collector-emitter breakdown voltage	V(BR)CEO	IC =1mA, IB=0			40	V
Emitter-base breakdown voltage	V(BR)EBO	IE =10A, IC=0			6	V
Emitter cut-off current	IEBO	VEB V =5V, IC=0			60	nA
DC current gain	hFE(1)	VCE=1V, IC=0.1mA		40
	hFE(2)	VCE=1V, IC=1mA		70
	hFE(3)	VCE=1V, IC=10mA			300
Collector-emitter saturation voltage	VCE(sat)1	IC=10mA, IB=1mA		0.20		V
Collector-emitter saturation voltage	VCE(sat)2	IC=50mA, IB=5mA		0.30		V
Base-emitter saturation voltage	VBE(sat)1	IC=10mA, IB=1mA		0.85		V
Base-emitter saturation voltage	VBE(sat)2	IC=50mA, IB=5mA		0.95		V
Transition frequency	fT	VCE=20V,IC=10mA,f=100MHz		300		MHz
Collector output capacitance	Cob	VCB=5V,IE=0,f=1MHz			4	pF
Collector cut-off current	ICEX	VCE=30V,VEB(off)=3V			50	nA
DC current gain	hFE(4)	VCE=1V, IC=50mA		100
Input capacitance	Cib	VCE=5V,IE=0mA,f=1MHz			8	pF
Transition frequency	td	VCC=3V, VBE(off)=0.5V IC=10mA, IB1=1mA			35	ns
Collector output capacitance	tf	V =3V, IC=10mA, IB1= IB2=1mA			35	ns
Input capacitance	tr				50	ns
Collector output capacitance	ts				200	ns

2508071805_MDD-Microdiode-Semiconductor-MMBT3904T_C50176506.pdf

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