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General purpose PNP transistor JUXING MMBT3906 suitable for various electronic circuit applications

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General purpose PNP transistor JUXING MMBT3906 suitable for various electronic circuit applications

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 200mW

Transition frequency(fT) : 300MHz

type : PNP

Current - Collector(Ic) : 200mA

Collector - Emitter Voltage VCEO : 40V

Operating Temperature : -55℃~+150℃@(Tj)

Description : Bipolar (BJT) Transistor PNP 40V 0.2A 300MHz 0.2W Surface Mount SOT-23

Mfr. Part # : MMBT3906

Model Number : MMBT3906

Package : SOT-23

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Product Overview

The MMBT3906 is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It features epitaxial planar die construction and is recommended as a complementary type to the NPN transistor MMBT3904. Its compact SOT-23 package makes it suitable for various electronic circuits.

Product Attributes

Marking: 2A
Package: SOT-23
Type: Plastic-Encapsulated Transistor
Complementary Type: MMBT3904 (NPN)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Collector-Base Voltage	VCBO			-40	V
Collector-Emitter Voltage	VCEO			-40	V
Emitter-Base Voltage	VEBO			-5	V
Collector Current - Continuous	IC			-0.2	A
Collector Dissipation	PC			0.2	W
Thermal Resistance Junction to Ambient	RJA			625	/W
Junction Temperature	TJ			150
Storage Temperature	Tstg		-55	+150
Collector-base breakdown voltage	V(BR)CBO	IC=-10A, IE=0	-40		V
Collector-emitter breakdown voltage	V(BR)CEO	IC= -1mA, IB=0	-40		V
Emitter-base breakdown voltage	V(BR)EBO	IE= -10A, IC=0	-5		V
Collector cut-off current	ICBO	VCB= -40 V, IE=0		-100	nA
Collector cut-off current	ICEX	VCE=-30V, VBE(off)=-3V		-50	nA
Emitter cut-off current	IEBO	VEB= -5V, IC=0		-100	nA
DC current gain	hFE1	VCE=-1V, IC= -10mA	100	300
DC current gain	hFE2	VCE= -1V, IC=-50mA	60
DC current gain	hFE3	VCE= -2V, IC=-100mA	30
Collector-emitter saturation voltage	VCE(sat)1	IC=-50mA, IB=-5mA		-0.3	V
Base-emitter saturation voltage	VBE(sat)	IC= -50mA, IB=-5mA		-0.95	V
Transition frequency	fT	VCE=-20V,IC=-10mA,f=100MHz	300		MHz
Delay Time	td	VCC=-3V,VBE=-0.5V IC=-10mA, IB1=IB2=-1mA		35	nS
Rise Time	tr	VCC=-3V,VBE=-0.5V IC=-10mA, IB1=IB2=-1mA		35	nS
Storage Time	ts	VCC=-3V,IC=-10mA IB1=IB2=-1mA		225	nS
Fall Time	tf	VCC=-3V,IC=-10mA IB1=IB2=-1mA		75	nS

2410121653_JUXING-MMBT3906_C3011092.pdf

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