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General Purpose Semiconductor LangJie BC817 NPN Transistor for Amplification and Switching Circuits

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General Purpose Semiconductor LangJie BC817 NPN Transistor for Amplification and Switching Circuits

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 300mW

Transition frequency(fT) : 150MHz

type : NPN

Number : 1 NPN

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 25V

Description : Bipolar (BJT) Transistor NPN 25V 0.5A 150MHz 0.3W Surface Mount SOT-23

Mfr. Part # : BC817

Model Number : BC817

Package : SOT-23

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Product Overview

This NPN transistor, identified by the marking '6C' and model BC817-40, is a general-purpose semiconductor device designed for various electronic applications. It offers a continuous collector current of 0.5A and a collector dissipation of 0.3W, making it suitable for moderate power switching and amplification tasks.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Plastic surface mounted package
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Test conditions	MIN	TYP	MAX	Units
Collector-base breakdown voltage	V(BR)CBO	IC= 100A, IE=0			40	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0			25	V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A, IC=0			5	V
Collector cut-off current	ICBO	VCB=40 V, IE=0			0.1	A
Collector cut-off current	ICEO	VCB=20V, IE=0			0.1	A
Emitter cut-off current	IEBO	VEB= 5V, IC=0			0.1	A
DC current gain	HFE(1)	VCE=1V, IC= 50mA	200	350
DC current gain	HFE(2)	VCE=1V, IC= 500mA	50
Collector-emitter saturation voltage	VCE(sat)	IC=500 mA, IB= 50mA			0.6	V
Base-emitter saturation voltage	VBE(sat)	IC=500 mA, IB= 50mA			1.2	V
Transition frequency	fT	VCE=6V, IC= 20mA, f=30MHz		150		MHz

Package Outline: SOT-23 (3 leads)

2410121321_LangJie-BC817_C18195374.pdf

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