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MDD Microdiode Semiconductor 2SC1623 transistor suitable for switching and amplification in circuits

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MDD Microdiode Semiconductor 2SC1623 transistor suitable for switching and amplification in circuits

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 200mW

Transition frequency(fT) : 250MHz

type : NPN

Current - Collector(Ic) : 100mA

Collector - Emitter Voltage VCEO : 50V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor NPN 50V 100mA 250MHz 200mW Surface Mount SOT-23

Mfr. Part # : 2SC1623

Model Number : 2SC1623

Package : SOT-23

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Product Overview

The 2SC1623 is an NPN plastic-encapsulated transistor in a SOT-23 package. It features high DC current gain (hFE=200 Typ) and high voltage capability (VCEO=50V), making it suitable for various electronic applications.

Product Attributes

Brand: microdiode
Package: SOT-23

Technical Specifications

Parameter	Symbol	Test Conditions	Value	Unit
Collector-Base Voltage	VCBO		60	V
Collector-Emitter Voltage	VCEO		50	V
Emitter-Base Voltage	VEBO		5	V
Collector Current	IC		100	mA
Collector Power Dissipation	PC		200	mW
Junction Temperature	Tj		150
Storage Temperature	Tstg		-55+150
Collector-base breakdown voltage	V(BR)CBO	IC=100A,IE=0	60	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA,IB=0	50	V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A,IC=0	5	V
Collector cut-off current	ICBO	VCB=60V,IE=0	0.1	A
Emitter cut-off current	IEBO	VEB=5V,IC=0	0.1	A
DC current gain	hFE	VCE=6V,IC=1mA	90-600
		(Typ)	200
		(Min)	90
Collector-emitter saturation voltage	VCE(sat)	IC=100mA,IB=10mA	0.3	V
Base-emitter saturation voltage	VBE(sat)	IC=100mA,IB=10mA	1	V
Transition frequency	fT	CE V =6V,IC=10mA	250	MHz

2411211946_MDD-Microdiode-Semiconductor-2SC1623_C2858495.pdf

Quality MDD Microdiode Semiconductor 2SC1623 transistor suitable for switching and amplification in circuits for sale

MDD Microdiode Semiconductor 2SC1623 transistor suitable for switching and amplification in circuits Images

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