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High Voltage PNP Transistor JUXING MMBT2907A Compatible with Multiple Electronic Device Requirements

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High Voltage PNP Transistor JUXING MMBT2907A Compatible with Multiple Electronic Device Requirements

Current - Collector Cutoff : 20nA

Pd - Power Dissipation : 250mW

Transition frequency(fT) : 200MHz

type : PNP

Current - Collector(Ic) : 600mA

Collector - Emitter Voltage VCEO : 60V

Operating Temperature : -55℃~+150℃@(Tj)

Description : 250mW PNP 600mA 60V SOT-23 Single Bipolar Transistors RoHS

Mfr. Part # : MMBT2907A

Model Number : MMBT2907A

Package : SOT-23

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MMBT2907A TRANSISTOR (PNP)

The MMBT2907A is an epitaxial planar die construction PNP transistor. It offers a complementary NPN type (MMBT2222A) and is suitable for various electronic applications requiring PNP transistor functionality.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				-60	V
Collector-Emitter Voltage	VCEO				-60	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current - Continuous	IC				-600	mA
Total Device Dissipation	PD	(Ta=25)			250	mW
Thermal Resistance Junction to Ambient	RJA			500		/W
Junction Temperature	TJ				150
Storage Temperature	Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC=-10A,IE=0	-60			V
Collector-emitter breakdown voltage	V(BR)CEO*	IC=-10mA,IB=0	-60			V
Emitter-base breakdown voltage	V(BR)EBO	IE=-10A,IC=0	-5			V
Collector cut-off current	ICBO	VCB=-50V,IE=0			-20	nA
Base cut-off current	IEBO	V EB=-3V, IC =0			-10	nA
Collector cut-off current	ICEX	VCE=-30 V, VBE(off) =-0.5V			-50	nA
DC current gain	hFE(1)	VCE=-10V,IC=-150mA	100		300
DC current gain	hFE(2)	VCE=-10V,IC=-0.1mA	75
DC current gain	hFE(3)	VCE=-10V,IC=-1mA	100
DC current gain	hFE(4)	VCE=-10V,IC=-10mA	100
DC current gain	hFE(5)	VCE=-10V,IC=-500mA	50
Collector-emitter saturation voltage	VCE(sat)*	IC=-150mA,IB=-15mA		-0.4		V
Collector-emitter saturation voltage	VCE(sat)*	IC=-500mA,IB=-50mA		-1.6		V
Base-emitter saturation voltage	VBE(sat)*	IC=-150mA,IB=-15mA		-1.3		V
Base-emitter saturation voltage	VBE(sat)*	IC=-500mA,IB=-50mA		-2.6		V
Transition frequency	fT	VCE=-20V,IC=-50mA,f=100MHz		200		MHz
Delay time	td				10	ns
Rise time	tr	VCE=-30V,IC=-150mA,B1=-15mA			25	ns
Storage time	tS				225	ns
Fall time	tf	VCE=-6V,IC=-150mA, IB1=- IB2=- 15mA			60	ns

2410121317_JUXING-MMBT2907A_C5356024.pdf

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