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Fast switching diode IDCHIP BAV70 suitable for general purpose electronic circuit applications

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Fast switching diode IDCHIP BAV70 suitable for general purpose electronic circuit applications

Non-Repetitive Peak Forward Surge Current : 5mA

Reverse Leakage Current (Ir) : 2.5uA@80V

Reverse Recovery Time (trr) : 6ns

Diode Configuration : -

Operating Junction Temperature Range : -

Voltage - DC Reverse (Vr) (Max) : 8V

Pd - Power Dissipation : 2mW

Voltage - Forward(Vf@If) : 1.25V@150mA

Current - Rectified : 2mA

Description : Diode 8V 2mA Surface Mount SOT-23

Mfr. Part # : BAV70

Model Number : BAV70

Package : SOT-23

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Product Overview

The BAV70 is a fast switching diode designed for general-purpose switching applications. It offers high conductance and is suitable for various electronic circuits requiring rapid signal switching.

Product Attributes

  • Brand: Not explicitly stated, but associated with Shenzhen Indreamchip Electronics Co., Ltd.
  • Origin: Shenzhen, China
  • Material: Plastic surface mounted package
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolMin.Typ.Max.UnitConditions
Maximum Ratings @TA=25
Reverse voltageVR8V
Forward CurrentIF2mA
Peak Forward Surge CurrentIFM(surge)5mA
Power DissipationPD2mW
Thermal Resistance Junction to Ambient AirRJA5/W
Junction temperatureTJ1
Storage temperature rangeTSTG-55150
Electrical Characteristics @TA=25
Reverse Breakdown VoltageVR80VIR=100A
Forward voltageVF10.715VIF=1mA
VF20.855VIF=10mA
VF31VIF=50mA
VF41.25VIF=150mA
Reverse currentIR2.5AVR=80V
Capacitance between terminalsCT1.5pFVR=0, f=1MHz
Reverse recovery timetrr6nsIF = IR = 10mA, Irr= 0.1 x IR, RL = 100

2409271333_IDCHIP-BAV70_C2848191.pdf


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