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NPN Transistor SOT23 Package Doeshare S8050 Power Dissipation 300mW Suitable Electronic Applications

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NPN Transistor SOT23 Package Doeshare S8050 Power Dissipation 300mW Suitable Electronic Applications

Current - Collector Cutoff : 100nA

Emitter-Base Voltage(Vebo) : 5V

Pd - Power Dissipation : 300mW

Transition frequency(fT) : 150MHz

type : NPN

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 25V

Description : Bipolar (BJT) Transistor NPN 25V 500mA 150MHz 300mW Surface Mount SOT-23

Mfr. Part # : S8050

Model Number : S8050

Package : SOT-23

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Product Overview

The S8050 is an NPN transistor in a SOT-23 plastic-encapsulated package. It offers a power dissipation of 300mW, high stability, and high reliability, making it a complementary component to the S8550. This general-purpose transistor is suitable for various electronic applications.

Product Attributes

Brand: DOESHARE
Package Type: SOT-23 Small Outline Plastic Package
Encapsulation: Plastic
Flame Retardancy: Epoxy UL: 94V-0
Mounting Position: Any
Marking: J3Y

Technical Specifications

Parameter	Symbol	Test Condition	Min	Max	Unit
Maximum Ratings & Thermal Characteristics (TA = 25C unless otherwise noted)
Collector-Base Voltage	VCBO			40	V
Collector-Emitter Voltage	VCEO			25	V
Emitter-Base Voltage	VEBO			5	V
Collector Current-Continuous	IC			500	mA
Collector Power Dissipation	PC			300	mW
Junction Temperature	Tj			150
Storage Temperature	Tstg		-55	+150
Thermal resistance From junction to ambient	RJA			417	/W
Electrical Characteristics (TA = 25C unless otherwise noted)
Collector-base breakdown voltage	V(BR)CBO	IC=100uA, IE=0	40		V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	25		V
Emitter-base breakdown voltage	V(BR)EBO	IE=100uA, IC=0	5		V
Collector cut-off current	ICEO	VCE=20V, IB=0		100	nA
Collector cut-off current	ICBO	VCB=40V, IE=0		100	nA
Emitter cut-off current	IEBO	VEB=5V, IC=0		100	nA
DC current gain	hFE(1)	VCE=1V, IC=50mA	120	400
DC current gain	hFE(2)	VCE=1V, IC=500mA	50
Collector-emitter saturation voltage	VCE(sat)	IC=500mA, IB=50mA		0.60	V
Base-emitter saturation voltage	VBE(sat)	IC=500mA, IB=50mA		1.20	V
Transition frequency	fT	VCE=6V, IC=20mA,f=30MHz	150		MHz

CLASSIFICATION OF hFE(1)

RANK	RANGE
L	120-200
H	200-350
J	300-400

2410121714_Doeshare-S8050_C2931719.pdf

Quality NPN Transistor SOT23 Package Doeshare S8050 Power Dissipation 300mW Suitable Electronic Applications for sale

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