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Compact SOT23 Package ElecSuper MMBT5551 NPN Transistor Suitable for Various Electronic Applications

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Compact SOT23 Package ElecSuper MMBT5551 NPN Transistor Suitable for Various Electronic Applications

Emitter-Base Voltage(Vebo) : 6V

Current - Collector Cutoff : 50nA

Pd - Power Dissipation : 300mW

Transition frequency(fT) : 100MHz

type : NPN

Number : 1 NPN

Current - Collector(Ic) : 600mA

Collector - Emitter Voltage VCEO : 160V

Operating Temperature : -

Description : Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 0.3W Surface Mount SOT-23

Mfr. Part # : MMBT5551

Model Number : MMBT5551

Package : SOT-23

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Product Overview

The MMBT5551 is a high-reliability NPN switching transistor designed for various electronic applications. It features a high collector-base voltage of 180V and a continuous collector current of 600mA, with a power dissipation of 300mW. This transistor is complementary to the MMBT5401 and offers high stability. It is housed in a compact SOT-23 small outline plastic package, suitable for any mounting position. Ideal for switching applications requiring robust performance and reliability.

Product Attributes

  • Brand: ElecSuper
  • Model: MMBT5551
  • Package Type: SOT-23 Small Outline Plastic Package
  • Material: Epoxy UL: 94V-0
  • Mounting Position: Any
  • Complementary To: MMBT5401

Technical Specifications

Parameters Symbol Value Unit Test Condition
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160 V
Emitter-Base Voltage VEBO 6 V
Collector Current-Continuous IC 600 mA
Collector Power Dissipation PC 300 mW
Junction Temperature Tj 150
Storage Temperature TSTG -55~150
Thermal Resistance (Junction to Ambient) RJA 416 /W
Collector-base breakdown voltage V(BR)CBO 180 V IC=100uA, IE=0
Collector-emitter breakdown voltage V(BR)CEO* 160 V IC=1mA, IB=0
Emitter-base breakdown voltage V(BR)EBO 6 V IE=10uA, IC=0
Collector cut-off current ICBO 50 nA VCB=120V, IE=0
Emitter cut-off current IEBO 50 nA VEB=4V, IC=0
DC current gain (hFE1) hFE1* 80 VCE=5V, IC=1mA
DC current gain (hFE2) hFE2* 100~300 VCE=5V, IC=10mA
DC current gain (hFE3) hFE3* 30 VCE=5V, IC=50mA
Collector-emitter saturation voltage VCE(sat) * 0.15 V IC=10mA, IB=1mA
Collector-emitter saturation voltage VCE(sat) * 0.20 V IC=50mA, IB=5mA
Base-emitter saturation voltage VBE(sat) * 1.00 V IC=10mA, IB=1mA
Base-emitter saturation voltage VBE(sat) * 1.00 V IC=50mA, IB=5mA
Transition frequency fT 100~300 MHz VCE=10V, IC=10mA, f=100MHz
Collector output capacitance COB 6 pF VCB=10V, IE=0, f=1MHz

Dimensions and Patterns (SOT-23)

Symbol Dimensions (mm) Min. Dimensions (mm) Max. Symbol Dimensions (mm) Min. Dimensions (mm) Max.
A 0.900 1.150 E1 2.250 2.550
A1 0.900 1.050 e 0.950 (TYP)
b 0.300 0.500 e1 1.800 2.000
c 0.080 0.150 L 0.550 (REF)
D 2.800 3.000 L1 0.300 0.500
E 1.200 1.400 0 8

Note:
1. Controlling dimension: in millimeters
2. General tolerance: 0.05mm
3. The pad layout is for reference only
4. Unit: mm


2410121717_ElecSuper-MMBT5551_C5249687.pdf


Quality Compact SOT23 Package ElecSuper MMBT5551 NPN Transistor Suitable for Various Electronic Applications for sale

Compact SOT23 Package ElecSuper MMBT5551 NPN Transistor Suitable for Various Electronic Applications Images

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