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Electronic component High Diode MMBT4403 PNP switching transistor with SOT23 plastic encapsulation

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Electronic component High Diode MMBT4403 PNP switching transistor with SOT23 plastic encapsulation

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 300mW

Transition frequency(fT) : 200MHz

type : PNP

Current - Collector(Ic) : 600mA

Collector - Emitter Voltage VCEO : 40V

Operating Temperature : -

Description : Bipolar (BJT) Transistor PNP 40V 600mA 200MHz 300mW Surface Mount SOT-23

Mfr. Part # : MMBT4403

Model Number : MMBT4403

Package : SOT-23

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Product Overview

The MMBT4403 is a 2T SOT-23 Plastic-Encapsulate Transistor, a high diode semiconductor designed as a switching transistor. It offers reliable performance for various electronic applications.

Product Attributes

Brand: High Diode Semiconductor
Package: SOT-23
Type: PNP, Switching Transistor

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC=-100A,IE=0			-40	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-1mA,IB=0			-40	V
Emitter-base breakdown voltage	V(BR)EBO	IE=-100A ,IC=0			-5	V
Collector cut-off current	ICBO	VCB=-35V,IE=0			-0.1	A
Collector cut-off current	ICEX	VCE=-35V, VBE=0.4V			-0.1	A
Emitter cut-off current	IEBO	VEB=-4V,IC=0			-0.1	A
DC current gain	hFE1	VCE=-1V, IC=-0.1mA	30
DC current gain	hFE2	VCE=-1V, IC=-1mA	60
DC current gain	hFE3	VCE=-1V, IC=-10mA	100
DC current gain	hFE4	VCE=-2V, IC=-150mA	100		300
DC current gain	hFE5	VCE=-2V, IC=-500mA	20
Collector-emitter saturation voltage	VCE(sat)	IC=-150mA,IB=-15mA			-0.4	V
Collector-emitter saturation voltage	VCE(sat)	IC=-500mA,IB=-50mA			-0.75	V
Base-emitter saturation voltage	VBE(sat	IC=-150mA,IB=-15mA			-0.95	V
Base-emitter saturation voltage	VBE(sat	IC=-500mA,IB=-50mA			-1.3	V
Transition frequency	fT	VCE=-10V, IC=-20mA,f =100MHz		200		MHz
Delay time	td	VCC=-30V, VBE(off)=-0.5V IC=-150mA , IB1=-15mA		15		ns
Rise time	tr			20		ns
Storage time	ts	VCC=-30V, IC=-150mA IB1=IB2=-15mA		225		ns
Fall time	tf			60		ns

2410121531_High-Diode-MMBT4403_C466633.pdf

Quality Electronic component High Diode MMBT4403 PNP switching transistor with SOT23 plastic encapsulation for sale

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