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Compact SOT23 package ElecSuper MMBT4403 transistor designed for switching applications and stability

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Compact SOT23 package ElecSuper MMBT4403 transistor designed for switching applications and stability

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 300mW

Transition frequency(fT) : 200MHz

type : PNP

Current - Collector(Ic) : 600mA

Collector - Emitter Voltage VCEO : 40V

Operating Temperature : -

Description : 300mW PNP 600mA 40V SOT-23 Single Bipolar Transistors RoHS

Mfr. Part # : MMBT4403

Model Number : MMBT4403

Package : SOT-23

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Product Overview

The MMBT4403 is a SuperTransistor, a PNP bipolar junction transistor designed for switching applications. It features a low collector-emitter saturation voltage and a high transition frequency, making it suitable for various electronic circuits. The transistor is housed in a compact SOT-23 small outline plastic package, offering high stability and reliability with a power dissipation of 300mW.

Product Attributes

  • Brand: ElecSuper
  • Package Type: SOT-23 Small Outline Plastic Package
  • Material: Epoxy UL: 94V-0
  • Mounting Position: Any

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Absolute Maximum Rating & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified)
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5 V
Collector Current-Continuous IC -600 mA
Collector Power Dissipation PC 300 mW
Junction Temperature Tj 150
Storage Temperature TSTG -55 ~150
Thermal resistance From junction to ambient RJA 417 /W
Electrical Characteristics (At TA = 25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -40 V
Emitter-base breakdown voltage V(BR)EBO IE=-100uA, IC=0 -5 V
Collector cut-off current ICEX VCE=-35V, VEB(off)=-0.4V -100 nA
Collector cut-off current ICBO VCB=-35V, IE=0 -100 nA
Emitter cut-off current IEBO VEB=-4V, IC=0 -100 nA
DC current gain hFE1 VCE=-1V, IC=-0.1mA 30
DC current gain hFE2 VCE=-1V, IC=-1mA 60
DC current gain hFE3 VCE=-1V, IC=-10mA 100
DC current gain hFE4 VCE=-2V, IC=-150mA 100 300
DC current gain hFE5 VCE=-2V, IC=-500mA 20
Collector-emitter saturation voltage VCE(sat) IC=-150mA, IB=-15mA -0.40 V
Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA -0.75 V
Base-emitter saturation voltage VBE(sat) IC=-150mA, IB=-15mA -0.95 V
Base-emitter saturation voltage VBE(sat) IC=-500mA, IB=-50mA -1.30 V
Transition frequency fT VCE=-10V, IC=-20mA, f=100MHz 200 MHz
Delay time td VCC=-30V, VBE(off)=-0.5V, IC=-150mA, IB1=-15mA 15 ns
Rise time tr 20 ns
Storage time ts VCC=-30V, IC=-150mA, IB1=IB2=-15mA 225 ns
Fall time tf 60 ns

Dimensions and Patterns (SOT-23)

Symbol Dimensions (mm) Min. Dimensions (mm) Max. Symbol Dimensions (mm) Min. Dimensions (mm) Max.
A 0.900 1.150 E1 2.250 2.550
A1 0.900 1.050 e 0.950 (TYP)
b 0.300 0.500 e1 1.800 2.000
c 0.080 0.150 L 0.550 (REF)
D 2.800 3.000 L1 0.300 0.500
E 1.200 1.400 0 8

Note:
1. Controlling dimension: in millimeters
2. General tolerance: 0.05mm
3. The pad layout is for reference only
4. Unit: mm


2410121917_ElecSuper-MMBT4403_C5249686.pdf


Quality Compact SOT23 package ElecSuper MMBT4403 transistor designed for switching applications and stability for sale

Compact SOT23 package ElecSuper MMBT4403 transistor designed for switching applications and stability Images

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