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Plastic Encapsulated Transistor CBI 2SC4177 Suitable for High Voltage Applications and Amplification

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Plastic Encapsulated Transistor CBI 2SC4177 Suitable for High Voltage Applications and Amplification

Current - Collector Cutoff : 100nA

Emitter-Base Voltage(Vebo) : 5V

Pd - Power Dissipation : 150mW

type : NPN

Number : 1 NPN

Current - Collector(Ic) : 100mA

Collector - Emitter Voltage VCEO : 50V

Description : Bipolar (BJT) Transistor NPN 50V 100mA 150mW Surface Mount SOT-323

Mfr. Part # : 2SC4177

Model Number : 2SC4177

Package : SOT-323

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Product Overview

This NPN transistor is designed for general-purpose amplification and offers high DC current gain. It is complementary to the 2SA1611 and is suitable for high voltage applications. Key features include high voltage ratings and a wide DC current gain range, with specific hFE ranks available for tailored performance.

Product Attributes

Brand: Heyuan China Base Electronics Technology Co., Ltd.
Product Type: Plastic-Encapsulated Transistors
Complementary to: 2SA1611
Marking: L4, L5, L6, L7

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Collector-Base Voltage	V_CBO			60	V
Collector-Emitter Voltage	V_CEO			50	V
Emitter-Base Voltage	V_EBO			5	V
Collector Current	I_C			100	mA
Collector Power Dissipation	P_C	(Ta=25 unless otherwise noted)		150	mW
Thermal Resistance From Junction To Ambient	R_JA			833	/W
Junction Temperature	T_j			150
Storage Temperature	T_stg		-55	+150
Collector-base breakdown voltage	V_(BR)CBO	I_C=100A, I_E=0	60		V
Collector-emitter breakdown voltage	V_(BR)CEO	I_C=1mA, I_B=0	50		V
Emitter-base breakdown voltage	V_(BR)EBO	I_E=100A, I_C=0	5		V
Collector cut-off current	I_CBO	V_CB=60V, I_E=0		100	nA
Emitter cut-off current	I_EBO	V_EB=5V, I_C=0		100	nA
DC current gain	h_FE*	V_CE=6V, I_C=1mA	90	600
Collector-emitter saturation voltage	V_CE(sat)	I_C=100mA, I_B=10mA		0.3	V
Base-emitter saturation voltage	V_BE(sat)	I_C=100mA, I_B=10mA		1	V
Base-emitter voltage	V_BE	V_CE=6V, I_C=1mA	0.55	0.65	V
Transition frequency	f_T	V_CE=6V, I_C=10mA		250	MHz
Collector output capacitance	C_ob	V_CB=6V, I_E=0, f=1MHz		3	pF

hFE Rank Classification

Rank	Range
L4	90180
L5	135270
L6	200400
L7	300600

Package Information

Package Type	Pinout
SOT-323	1. BASE, 2. EMITTER, 3. COLLECTOR

2409291504_CBI-2SC4177_C21714264.pdf

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