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High Current NPN Transistor BLUE ROCKET 9013M-H Suitable for Class B Amplifier and Complementary Pair

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High Current NPN Transistor BLUE ROCKET 9013M-H Suitable for Class B Amplifier and Complementary Pair

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 450mW

Transition frequency(fT) : -

type : NPN

Number : 1 NPN

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 20V

Operating Temperature : -

Description : Bipolar (BJT) Transistor NPN 20V 500mA 450mW Surface Mount SOT-23

Mfr. Part # : 9013M-H

Model Number : 9013M-H

Package : SOT-23

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Product Overview

The 9013M is a Silicon NPN transistor housed in a SOT-23 plastic package. It features high collector current (PC) and high DC current gain (hFE) with excellent linearity. This transistor is designed as a complementary pair to the 9012M and is primarily used as an amplifier in portable radios for class B push-pull operation. Its high performance and complementary nature make it suitable for various amplification applications.

Product Attributes

  • Brand: fsbrec (implied from datasheet URL)
  • Package Type: SOT-23 Plastic Package
  • Transistor Type: NPN Silicon Transistor
  • Complementary Pair: 9012M

Technical Specifications

Absolute Maximum Ratings (Ta=25)

Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 40 V
Collector to Emitter Voltage VCEO 20 V
Emitter to Base Voltage VEBO 5.0 V
Collector Current IC 500 mA
Base Current IB 100 mA
Collector Power Dissipation PC 450 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150

Electrical Characteristics (Ta=25)

Parameter Symbol Test Conditions Min Typ Max Unit
Collector to Base Breakdown Voltage VCBO IC=0.1mA, IE=0 40 V
Collector to Emitter Breakdown Voltage VCEO IC=1.0mA, IB=0 20 V
Emitter to Base Breakdown Voltage VEBO IE=0.1mA, IC=0 5.0 V
Collector Cut-Off Current ICBO VCB=25V, IE=0 0.1 A
Emitter Cut-Off Current IEBO VEB=3.0V, IC=0 0.1 A
DC Current Gain (1) hFE(1) VCE=1.0V, IC=50mA 150 300
DC Current Gain (2) hFE(2) VCE=1.0V, IC=500mA 40
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA 0.16 0.6 V
Base-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=50mA 0.91 1.2 V
Base-Emitter Voltage VBE VCE=1.0V, IC=10mA 0.67 0.7 V

hFE Classifications & Marking

hFE Classification Symbol hFE Range Marking
D 6491 HJ3D
E 78112 HJ3E
F 96135 HJ3F
G 112166 HJ3G
H 144202 HJ3H
I 188276 HJ3I

Pinning

Pin 1 Pin 2 Pin 3
Base Emitter Collector

Marking Instructions

Note: H: Company Code, J3: Product Type Code, D: hFE Classification Symbol Code (e.g., HJ3D)

Resistance to Soldering Heat Test Conditions

Condition Temperature Time
Test 2605 101 sec.

Packaging SPEC.

Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Reel Dimensions Inner Box Dimensions Outer Box Dimensions
SOT-23 3,000 10 30,000 6 180,000 78 180120180 39385205

2410121238_BLUE-ROCKET-9013M-H_C305460.pdf


Quality High Current NPN Transistor BLUE ROCKET 9013M-H Suitable for Class B Amplifier and Complementary Pair for sale

High Current NPN Transistor BLUE ROCKET 9013M-H Suitable for Class B Amplifier and Complementary Pair Images

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